- Vgs - Gate-Source Voltage :
- Mounting Style :
- Minimum Operating Temperature :
- Number of Channels :
- Id - Continuous Drain Current :
-
- - 10.8 A (1)
- - 12 A (1)
- - 13 A (1)
- - 15 A (1)
- - 16 A (1)
- - 18 A (1)
- - 2.5 A (1)
- - 20 A (1)
- - 22 A (1)
- - 24 A (1)
- - 27 A (1)
- - 3 A (1)
- - 3.4 A (1)
- - 30 A (5)
- - 40 A (2)
- - 44 A (1)
- - 45 A (2)
- - 49 A (1)
- - 5.3 A (1)
- - 50 A (8)
- - 6.8 A (1)
- - 60 A (1)
- - 7 A (1)
- - 7.5 A (1)
- - 70 A (2)
- - 75 A (1)
- - 8.8 A (1)
- - 80 A (8)
- - 82 A (1)
- - 90 A (4)
- Rds On - Drain-Source Resistance :
-
- 0.005 Ohms (3)
- 0.0064 Ohms (1)
- 0.007 Ohms (4)
- 0.008 Ohms (1)
- 0.009 Ohms (1)
- 0.013 Ohms (1)
- 0.018 Ohms (1)
- 0.022 Ohms (1)
- 0.035 Ohms (2)
- 0.125 Ohms (1)
- 0.13 Ohms (1)
- 10 mOhms (1)
- 10.5 mOhms (1)
- 10.8 mOhms (1)
- 12 mOhms (1)
- 130 mOhms (1)
- 14 mOhms (1)
- 15 mOhms (1)
- 20 mOhms (2)
- 23 mOhms (2)
- 3.3 mOhms (2)
- 3.5 mOhms (1)
- 3.6 mOhms (2)
- 3.7 mOhms (2)
- 30 mOhms (1)
- 32 mOhms (1)
- 33 mOhms (1)
- 37 mOhms (1)
- 4.1 mOhms (1)
- 4.7 mOhms (1)
- 5 mOhms (1)
- 5.6 mOhms (2)
- 5.7 mOhms (3)
- 50 mOhms (1)
- 6.4 mOhms (1)
- 6.9 mOhms (2)
- 7 mOhms (1)
- 9 mOhms (2)
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
-
- - 126 nC (3)
- 100 nC (1)
- 108 nC (1)
- 109 nC (1)
- 113 nC (2)
- 12.8 nC (1)
- 125 nC (1)
- 130 nC (2)
- 146 nC (1)
- 155 nC (2)
- 160 nC (4)
- 164 nC (2)
- 175 nC (1)
- 18.5 nC (1)
- 21 nC (1)
- 23.5 nC (1)
- 24 nC (1)
- 25 nC (1)
- 26 nC (2)
- 30.6 nC (1)
- 34 nC (1)
- 42 nC (2)
- 47 nC (1)
- 50 nC (1)
- 58 nC (1)
- 6.5 nC (1)
- 6.8 nC (1)
- 63 nC (2)
- 76 nC (1)
- 80 nC (2)
- 83 nC (1)
- 91 nC (1)
- Tradename :
54 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
19,249
In-stock
|
Fairchild Semiconductor | MOSFET 30V P-Channel PowerTrench | 25 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 40 A | 20 mOhms | Enhancement | PowerTrench | |||||
|
|
4,122
In-stock
|
Fairchild Semiconductor | MOSFET -30V Dual | 20 V | SMD/SMT | SO-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | P-Channel | - 30 V | - 7 A | 23 mOhms | Enhancement | PowerTrench | |||||
|
|
3,669
In-stock
|
STMicroelectronics | MOSFET P-Ch 30 Volt 24 Amp | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 24 A | 32 mOhms | Enhancement | ||||||
|
|
3,406
In-stock
|
Fairchild Semiconductor | MOSFET SO-8 | 25 V | SMD/SMT | SO-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 13 A | 9 mOhms | Enhancement | PowerTrench | |||||
|
|
5,092
In-stock
|
Infineon Technologies | MOSFET P-Ch -30V 80A TO220-3 OptiMOS-P2 | - 16 V, + 5 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 30 V | - 80 A | 3.7 mOhms | - 2 V | 160 nC | Enhancement | OptiMOS | |||
|
|
1,971
In-stock
|
Fairchild Semiconductor | MOSFET P-Ch LL FET Enhancement Mode | 16 V | SMD/SMT | TO-263-3 | - 65 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 30 A | 37 mOhms | Enhancement | ||||||
|
|
2,199
In-stock
|
Infineon Technologies | MOSFET P-Ch -30V 90A DPAK-2 OptiMOS-P2 | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 90 A | 3.6 mOhms | - 4 V | 130 nC | Enhancement | OptiMOS | |||
|
|
5,377
In-stock
|
Infineon Technologies | MOSFET P-Ch -30V 50A DPAK-4 OptiMOS P | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 50 A | 5.7 mOhms | - 2 V | - 126 nC | Enhancement | OptiMOS | |||
|
|
6,303
In-stock
|
Infineon Technologies | MOSFET P-Ch -30V -50A DPAK-2 OptiMOS-P2 | 5 V, - 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 50 A | 10.5 mOhms | Enhancement | OptiMOS | |||||
|
|
2,607
In-stock
|
Vishay Semiconductors | MOSFET 30V 50A 71W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 50 A | 0.008 Ohms | - 2.5 V | 83 nC | Enhancement | TrenchFET | |||
|
|
2,000
In-stock
|
Siliconix / Vishay | MOSFET P-Channel 30V AEC-Q101 Qualified | +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 22 A | 0.007 Ohms | - 2.5 V | 113 nC | Enhancement | TrenchFET | |||
|
|
2,500
In-stock
|
Infineon Technologies | MOSFET P-Ch -30V 90A DPAK-2 OptiMOS-P2 | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 90 A | 3.6 mOhms | - 4 V | 130 nC | Enhancement | ||||
|
|
1,987
In-stock
|
Infineon Technologies | MOSFET P-Ch -30V 50A DPAK-4 OptiMOS P | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 50 A | 5.7 mOhms | - 2 V | - 126 nC | Enhancement | ||||
|
|
3,000
In-stock
|
Siliconix / Vishay | MOSFET P Ch -30Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 30 A | 7 mOhms | - 2.5 V | 164 nC | Enhancement | ||||
|
|
5,000
In-stock
|
Fairchild Semiconductor | MOSFET SO-8 SGL P-CH -30V | 25 V | SMD/SMT | SO-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 5.3 A | 50 mOhms | Enhancement | PowerTrench | |||||
|
|
2,331
In-stock
|
Infineon Technologies | MOSFET P-Ch -30V -45A TO220-3 OptiMOS-P2 | + 5 V, - 16 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 30 V | - 45 A | 9 mOhms | - 1.5 V | 42 nC | Enhancement | OptiMOS | |||
|
|
2,539
In-stock
|
Fairchild Semiconductor | MOSFET SO-8 | 25 V | SMD/SMT | SO-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 3.4 A | 130 mOhms | Enhancement | PowerTrench | |||||
|
|
3,217
In-stock
|
Fairchild Semiconductor | MOSFET 30V SinGLE P-Ch | 20 V | SMD/SMT | SO-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 8.8 A | 20 mOhms | Enhancement | PowerTrench | |||||
|
|
2,194
In-stock
|
Infineon Technologies | MOSFET SMALL SIGNAL+P-CH | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 70 A | 5 mOhms | - 2 V | 91 nC | Enhancement | ||||
|
|
GET PRICE |
15,130
In-stock
|
Infineon Technologies | MOSFET P-Ch -30V -80A DPAK-2 OptiMOS-P2 | 5 V, - 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 80 A | 5.6 mOhms | - 2 V | 80 nC | Enhancement | OptiMOS | ||
|
|
1,103
In-stock
|
Infineon Technologies | MOSFET P-Ch -30V -80A D2PAK-2 OptiMOS-P2 | 5 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 80 A | 4.1 mOhms | 125 nC | OptiMOS | |||||
|
|
2,026
In-stock
|
STMicroelectronics | MOSFET P-CH 30V 0.024Ohm 12A STripFET VI | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 12 A | 30 mOhms | 2.5 V | 26 nC | |||||
|
|
1,385
In-stock
|
Siliconix / Vishay | MOSFET P-Channel 30V AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-1212-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 16 A | 0.018 Ohms | - 2.5 V | 26 nC | Enhancement | TrenchFET | |||
|
|
525
In-stock
|
Siliconix / Vishay | MOSFET P-Channel 30V AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | 1 Channel | Si | P-Channel | - 30 V | - 50 A | 0.005 Ohms | - 2.5 V | 155 nC | Enhancement | TrenchFET | ||||
|
|
1,507
In-stock
|
Infineon Technologies | MOSFET P-Ch -30V -90A DPAK-2 OptiMOS-P2 | 5 V, - 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 90 A | 3.3 mOhms | - 2 V | 160 nC | Enhancement | ||||
|
|
1,902
In-stock
|
Vishay Semiconductors | MOSFET 30V 10.8A 6W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 10.8 A | 0.022 Ohms | - 2.5 V | 25 nC | Enhancement | TrenchFET | |||
|
|
970
In-stock
|
Infineon Technologies | MOSFET P-Ch -30V -80A D2PAK-2 OptiMOS-P2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 80 A | 4.7 mOhms | 100 nC | OptiMOS | |||||
|
|
2,500
In-stock
|
Siliconix / Vishay | MOSFET P-Channel 30V AEC-Q101 Qualified | +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 15 A | 0.013 Ohms | - 2.5 V | 58 nC | Enhancement | TrenchFET | |||
|
|
3,028
In-stock
|
Vishay Semiconductors | MOSFET 30V 3A 3W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | SOT-363-6 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 3 A | 0.125 Ohms | - 2 V | 6.5 nC | Enhancement | TrenchFET | |||
|
|
627
In-stock
|
Infineon Technologies | MOSFET P-Ch -30V 80A TO220-3 OptiMOS-P2 | - 16 V, + 5 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 30 V | - 80 A | 3.7 mOhms | - 2 V | 160 nC | Enhancement |
