- Vgs - Gate-Source Voltage :
- Minimum Operating Temperature :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Tradename :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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1,971
In-stock
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Fairchild Semiconductor | MOSFET P-Ch LL FET Enhancement Mode | 16 V | SMD/SMT | TO-263-3 | - 65 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 30 A | 37 mOhms | Enhancement | ||||||
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1,103
In-stock
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Infineon Technologies | MOSFET P-Ch -30V -80A D2PAK-2 OptiMOS-P2 | 5 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 80 A | 4.1 mOhms | 125 nC | OptiMOS | |||||
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525
In-stock
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Siliconix / Vishay | MOSFET P-Channel 30V AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | 1 Channel | Si | P-Channel | - 30 V | - 50 A | 0.005 Ohms | - 2.5 V | 155 nC | Enhancement | TrenchFET | ||||
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970
In-stock
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Infineon Technologies | MOSFET P-Ch -30V -80A D2PAK-2 OptiMOS-P2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 80 A | 4.7 mOhms | 100 nC | OptiMOS | |||||
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VIEW | Infineon Technologies | MOSFET P-Ch -30V -45A D2PAK-2 OptiMOS-P2 | 5 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 45 A | 10.8 mOhms | 42 nC | OptiMOS | |||||
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1,876
In-stock
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Infineon Technologies | MOSFET P-Ch -30V -80A D2PAK-2 OptiMOS-P2 | 5 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 80 A | 6.9 mOhms | 63 nC | OptiMOS |
