- Vgs - Gate-Source Voltage :
- Mounting Style :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
-
- 1.1 mOhms (2)
- 1.2 mOhms (4)
- 1.25 mOhms (1)
- 1.3 mOhms (2)
- 1.4 mOhms (3)
- 1.58 mOhms (2)
- 1.7 mOhms (5)
- 1.8 mOhms (1)
- 1.88 mOhms (2)
- 1.9 mOhms (4)
- 14 mOhms (2)
- 2.1 mOhms (2)
- 2.2 mOhms (1)
- 2.4 mOhms (2)
- 2.5 mOhms (1)
- 2.7 mOhms (3)
- 2.9 mOhms (1)
- 3 mOhms (2)
- 3.5 mOhms (2)
- 3.7 mOhms (1)
- 4 mOhms (2)
- 4.3 mOhms (4)
- 4.9 mOhms (1)
- 5.3 mOhms (2)
- 5.6 mOhms (1)
- 5.7 mOhms (1)
- 5.9 mOhms (1)
- 500 uOhms (1)
- 530 uOhms (2)
- 570 uOhms (1)
- 6 mOhms (2)
- 6.4 mOhms (1)
- 650 uOhms (1)
- 7 mOhms (1)
- 7.2 mOhms (2)
- 7.6 mOhms (1)
- 7.9 mOhms (1)
- 700 uOhms (1)
- 800 uOhms (2)
- 850 mOhms (1)
- 900 uOhms (2)
- Qg - Gate Charge :
-
- 110 nC (1)
- 115 nC (2)
- 128 nC (2)
- 134 nC (4)
- 137 nC (2)
- 14.7 nC (1)
- 144 nC (1)
- 15 nC (1)
- 150 nC (1)
- 176 nC (2)
- 182 nC (3)
- 208 nC (1)
- 22.4 nC (2)
- 220 nC (1)
- 225 nC (2)
- 23.5 nC (1)
- 24 nC (1)
- 240 nC (2)
- 250 nC (2)
- 256 nC (4)
- 260 nC (1)
- 286 nC (2)
- 287 nC (2)
- 32 nC (4)
- 34.3 nC (1)
- 36 nC (1)
- 37 nC (2)
- 41 nC (3)
- 41.9 nC (2)
- 43 nC (4)
- 44 nC (1)
- 45 nC (1)
- 480 nC (1)
- 49.1 nC (1)
- 51 nC (1)
- 56 nC (1)
- 66 nC (2)
- 68.6 nC (1)
- 70 nC (1)
- 71 nC (1)
- 80.6 nC (1)
- 860 nC (1)
- 90 nC (3)
- Tradename :
74 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
1,399
In-stock
|
onsemi | MOSFET NFET SO8FL 40V 345A 8MOHM | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 378 A | 570 uOhms | 2 V | 128 nC | Enhancement | ||||
|
|
1,420
In-stock
|
onsemi | MOSFET T6D3F 40V NFET | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 140 A | 1.9 mOhms | 2 V | 32 nC | Enhancement | ||||
|
|
3,383
In-stock
|
Fairchild Semiconductor | MOSFET 40V 80A Power56 N-Chnl PowerTrench | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 80 A | 3 mOhms | 2 V | 71 nC | Enhancement | PowerTrench | |||
|
|
927
In-stock
|
Fairchild Semiconductor | MOSFET TO-leadless, PT8, 40V | 20 V | SMD/SMT | H-PSOF-8 | - 55 C | + 175 C | Reel | Si | N-Channel | 40 V | 240 A | 1.2 mOhms | 2 V | 90 nC | Enhancement | PowerTrench | ||||
|
|
2,752
In-stock
|
Fairchild Semiconductor | MOSFET TO-leadless, PT8, 40V | 20 V | SMD/SMT | H-PSOF-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 240 A | 650 uOhms | 2 V | 144 nC | Enhancement | PowerTrench | |||
|
|
735
In-stock
|
Fairchild Semiconductor | MOSFET 40V N-Channel Power Trench MOSFET | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 460 A | 1.8 mOhms | 2 V | 208 nC | Enhancement | PowerTrench | |||
|
|
2,941
In-stock
|
Fairchild Semiconductor | MOSFET 40V 65A N-Chnl Power Trench MOSFET | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 65 A | 5.6 mOhms | 2 V | 41 nC | Enhancement | PowerTrench | |||
|
|
2,800
In-stock
|
Infineon Technologies | MOSFET N-Ch 40V 160A D2PAK-6 OptiMOS-T2 | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 160 A | 1.4 mOhms | 2 V | 137 nC | Enhancement | OptiMOS | |||
|
|
2,926
In-stock
|
IR / Infineon | MOSFET AUTO 40V 1 N-CH HEXFET 3.7mOhms | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 180 A | 2.7 mOhms | 2 V | 150 nC | Enhancement | ||||
|
|
1,325
In-stock
|
onsemi | MOSFET T6-40V N 0.7 MOHMS SL | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 175 C | Reel | Si | N-Channel | 40 V | 378 A | 700 uOhms | 2 V | 128 nC | Enhancement | |||||
|
|
990
In-stock
|
Infineon Technologies | MOSFET N-Ch 40V 180A D2PAK-6 OptiMOS-T2 | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 180 A | 800 uOhms | 2 V | 286 nC | Enhancement | OptiMOS | |||
|
|
7,135
In-stock
|
Infineon Technologies | MOSFET N-Ch 40V 90A DPAK-2 OptiMOS-T2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 90 A | 2.7 mOhms | 2 V | 66 nC | Enhancement | OptiMOS | |||
|
|
2,956
In-stock
|
IR / Infineon | MOSFET AUTO 40V 1 N-CH HEXFET 2.3mOhms | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 320 A | 1.2 mOhms | 2 V | 260 nC | Enhancement | ||||
|
|
1,910
In-stock
|
Infineon Technologies | MOSFET N-Ch 40V 120A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 120 A | 1.2 mOhms | 2 V | 250 nC | Enhancement | OptiMOS | |||
|
|
3,975
In-stock
|
Infineon Technologies | MOSFET N-Ch 40V 90A DPAK-2 OptiMOS-T2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 86 A | 4.3 mOhms | 2 V | 37 nC | Enhancement | ||||
|
|
2,132
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 80 A | 3 mOhms | 2 V | 70 nC | Enhancement | ||||
|
|
2,451
In-stock
|
Infineon Technologies | MOSFET N-Ch 40V 90A DPAK-2 OptiMOS-T2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 90 A | 2.7 mOhms | 2 V | 66 nC | Enhancement | ||||
|
|
1,000
In-stock
|
Infineon Technologies | MOSFET N-Ch 40V 180A D2PAK-6 OptiMOS-T2 | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 180 A | 800 uOhms | 2 V | 286 nC | Enhancement | ||||
|
|
988
In-stock
|
STMicroelectronics | MOSFET N-CH 40V 11mOhm 200A STripFET | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 200 A | 1.3 mOhms | 2 V | 240 nC | Enhancement | ||||
|
|
964
In-stock
|
STMicroelectronics | MOSFET N-CH 40V 11mOhm typ 200A STripFET | 20 V | SMD/SMT | H2PAK-2 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 200 A | 1.3 mOhms | 2 V | 240 nC | Enhancement | ||||
|
|
2,496
In-stock
|
Fairchild Semiconductor | MOSFET MV8 40/20V 740A N-Channel Power Trench MOSFET | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 50 A | 7.9 mOhms | 2 V | 24 nC | Enhancement | PowerTrench | |||
|
|
2,311
In-stock
|
Fairchild Semiconductor | MOSFET 40V 15A DPAK N-Chnl PowerTrench | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 15 A | 14 mOhms | 2 V | 15 nC | Enhancement | PowerTrench | |||
|
|
1,045
In-stock
|
Infineon Technologies | MOSFET N-Ch 40V 160A D2PAK-6 OptiMOS-T2 | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 160 A | 1.4 mOhms | 2 V | 137 nC | Enhancement | ||||
|
|
1,590
In-stock
|
STMicroelectronics | MOSFET Automotive-grade N-channel 40 V, 5.5 mOhm typ., 80 A, STripF... | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 80 A | 6 mOhms | 2 V | 36 nC | Enhancement | ||||
|
|
2,258
In-stock
|
STMicroelectronics | MOSFET Automotive-grade N-channel 40 V, 7 mOhm typ., 54 A STripFE... | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 54 A | 7 mOhms | 2 V | 44 nC | Enhancement | ||||
|
|
1,847
In-stock
|
Infineon Technologies | MOSFET N-Ch 40V 70A D2PAK-2 OptiMOS-T2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 70 A | 5.3 mOhms | 2 V | 32 nC | Enhancement | OptiMOS | |||
|
|
798
In-stock
|
Infineon Technologies | MOSFET N-Ch 40V 120A D2PAK-2 OptiMOS-T2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 120 A | 1.58 mOhms | 2 V | 134 nC | Enhancement | ||||
|
|
1,500
In-stock
|
Diodes Incorporated | MOSFET 40V 175c N-Ch FET 8.6mOhm 10Vgs 45A | 20 V | SMD/SMT | PowerDI5060-C-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 4.9 mOhms | 2 V | 41.9 nC | Enhancement | ||||
|
|
2,500
In-stock
|
Diodes Incorporated | MOSFET 40V 175c N-Ch FET 3.7mOHm 10V 100A | 20 V | SMD/SMT | POWERDI5060-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 20.9 A | 3.7 mOhms | 2 V | 49.1 nC | Enhancement | ||||
|
|
500
In-stock
|
STMicroelectronics | MOSFET Automotive-grade N-channel 40 V, 1.3 mOhm typ., 180 A STripF... | 20 V | SMD/SMT | H2PAK-6 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 180 A | 1.7 mOhms | 2 V | 115 nC | Enhancement |
