- Manufacture :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Tradename :
10 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,926
In-stock
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IR / Infineon | MOSFET AUTO 40V 1 N-CH HEXFET 3.7mOhms | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 180 A | 2.7 mOhms | 2 V | 150 nC | Enhancement | ||||
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990
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 180A D2PAK-6 OptiMOS-T2 | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 180 A | 800 uOhms | 2 V | 286 nC | Enhancement | OptiMOS | |||
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1,000
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 180A D2PAK-6 OptiMOS-T2 | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 180 A | 800 uOhms | 2 V | 286 nC | Enhancement | ||||
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500
In-stock
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STMicroelectronics | MOSFET Automotive-grade N-channel 40 V, 1.3 mOhm typ., 180 A STripF... | 20 V | SMD/SMT | H2PAK-6 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 180 A | 1.7 mOhms | 2 V | 115 nC | Enhancement | ||||
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385
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 180A D2PAK-6 OptiMOS-T2 | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 180 A | 900 uOhms | 2 V | 225 nC | Enhancement | OptiMOS | |||
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800
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 180A D2PAK-6 OptiMOS-T2 | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 180 A | 1.1 mOhms | 2 V | 176 nC | Enhancement | OptiMOS | |||
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VIEW | STMicroelectronics | MOSFET Automotive-grade N-channel 40 V, 1.3 mOhm typ., 180 A STripF... | 20 V | SMD/SMT | H2PAK-2 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 180 A | 1.7 mOhms | 2 V | 115 nC | Enhancement | ||||
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900
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 180A D2PAK-6 OptiMOS-T2 | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 180 A | 900 uOhms | 2 V | 225 nC | Enhancement | ||||
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VIEW | Infineon Technologies | MOSFET N-Ch 30V 180A D2PAK-6 OptiMOS-T2 | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 180 A | 1.1 mOhms | 2 V | 176 nC | Enhancement | ||||
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1,000
In-stock
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STMicroelectronics | MOSFET N-Ch 40 V 1.4 mOhm 180 A STripFET III | 20 V | SMD/SMT | H2PAK-2 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 180 A | 1.4 mOhms | 2 V | 110 nC | Enhancement | STripFET |