- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Tradename :
18 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GET PRICE |
2,990
In-stock
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Vishay Semiconductors | MOSFET 100V 32A 83W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 32 A | 0.021 Ohms | 2.5 V | 63 nC | Enhancement | TrenchFET | ||
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GET PRICE |
4,225
In-stock
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Fairchild Semiconductor | MOSFET 60V N-Channel QFET Logic Level | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 32 A | 27 mOhms | Enhancement | QFET | ||||
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GET PRICE |
3,270
In-stock
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onsemi | MOSFET NFET DPAK 100V 34A 37MO | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 32 A | 30 mOhms | 2 V | 40 nC | ||||
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GET PRICE |
2,217
In-stock
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STMicroelectronics | MOSFET N-Ch 100V 0.02 Ohm typ. 35A STripFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 32 A | 24 mOhms | 4.5 V | 19 nC | ||||
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GET PRICE |
2,326
In-stock
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Infineon Technologies | MOSFET MOSFT 100V 32A 44mOhm 48nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 32 A | 44 mOhms | 4 V | 71 nC | ||||
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GET PRICE |
2,105
In-stock
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Siliconix / Vishay | MOSFET N-Chnl 60-V (D-S) AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 32 A | 0.014 Ohms | 1.5 V | 44 nC | Enhancement | TrenchFET | ||
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GET PRICE |
885
In-stock
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Vishay Semiconductors | MOSFET 40V 32A 83W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 32 A | 0.0035 Ohms | 1.5 V | 120 nC | Enhancement | TrenchFET | ||
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GET PRICE |
1,898
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 32 A | 24 mOhms | 4.5 V | 19 nC | Enhancement | |||
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GET PRICE |
948
In-stock
|
Fairchild Semiconductor | MOSFET 100V N-Channel Pwr Trench | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 32 A | 32 mOhms | Enhancement | PowerTrench | ||||
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GET PRICE |
686
In-stock
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Fairchild Semiconductor | MOSFET 100V 32a .36Ohm/VGS=1V | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 32 A | 36 mOhms | Enhancement | PowerTrench | ||||
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GET PRICE |
900
In-stock
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Siliconix / Vishay | MOSFET 100V 32A 27watt AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 32 A | 0.009 Ohms | 1.5 V | 51 nC | Enhancement | TrenchFET | ||
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GET PRICE |
1,078
In-stock
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Infineon Technologies | MOSFET 100V 1 N-CH HEXFET 44mOhms 48nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 32 A | 44 mOhms | 48 nC | Enhancement | ||||
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GET PRICE |
29
In-stock
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IXYS | MOSFET 32 Amps 200V 78 Rds | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 32 A | 78 mOhms | 5 V | 38 nC | Enhancement | Trench | ||
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GET PRICE |
1,016
In-stock
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Fairchild Semiconductor | MOSFET N-Channel PwrTrench | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 32 A | 32 mOhms | Enhancement | |||||
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GET PRICE |
3,900
In-stock
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Fairchild Semiconductor | MOSFET 60V N-Channel QFET Logic Level | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 32 A | 35 mOhms | Enhancement | |||||
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VIEW | IXYS | MOSFET 32 Amps 200V 78 Rds | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 32 A | 78 mOhms | Enhancement | ||||||
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VIEW | Siliconix / Vishay | MOSFET N-Channel 30V AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 32 A | 0.0035 Ohms | 1.5 V | 110 nC | Enhancement | TrenchFET | |||
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VIEW | Vishay Semiconductors | MOSFET N Ch 30Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 32 A | 0.0031 Ohms | 1.5 V | 110 nC | Enhancement |
