1 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Qg - Gate Charge | |
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Infineon Technologies | MOSFET Auto Q101 -55V P-Ch HEXFET Power MOSFET | 20 V | Through Hole | TO-262-3 | + 175 C | Tube | 1 Channel | Si | P-Channel | - 55 V | - 74 A | 20 mOhms | 120 nC |
