- Vgs - Gate-Source Voltage :
- Mounting Style :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
32 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GET PRICE |
1,704
In-stock
|
Fairchild Semiconductor | MOSFET Trans MOS N-Ch 55V 75A | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 75 A | 7 mOhms | Enhancement | UltraFET | ||||
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GET PRICE |
1,394
In-stock
|
STMicroelectronics | MOSFET N-Ch 100V 6mOhm 110A STripFET VII | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | Si | N-Channel | 100 V | 110 A | 7 mOhms | 2 V to 4 V | 60 nC | |||||
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GET PRICE |
1,354
In-stock
|
STMicroelectronics | MOSFET N-CH 100V 5.1 mOhm 45A STripFET VII | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 45 A | 7 mOhms | 4.5 V | 72 nC | ||||
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GET PRICE |
2,900
In-stock
|
Infineon Technologies | MOSFET 60VAUTO GRADE 1 N-CH HEXFET 7mOhms | 20 V | SMD/SMT | DirectFET-M4 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 68 A | 7 mOhms | 35 nC | Enhancement | ||||
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GET PRICE |
3,000
In-stock
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Siliconix / Vishay | MOSFET P Ch -30Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 30 A | 7 mOhms | - 2.5 V | 164 nC | Enhancement | |||
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GET PRICE |
725
In-stock
|
Fairchild Semiconductor | MOSFET 80V 110A N-Chnl PowerTrench MOSFET | 20 V | Through Hole | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 110 A | 7 mOhms | 2 V | 86 nC | Enhancement | PowerTrench | ||
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GET PRICE |
1,101
In-stock
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Infineon Technologies | MOSFET MV POWER MOS | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 80 A | 7 mOhms | 2 V | 55 nC | Enhancement | |||
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GET PRICE |
2,258
In-stock
|
STMicroelectronics | MOSFET Automotive-grade N-channel 40 V, 7 mOhm typ., 54 A STripFE... | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 54 A | 7 mOhms | 2 V | 44 nC | Enhancement | |||
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GET PRICE |
541
In-stock
|
Fairchild Semiconductor | MOSFET N-Channel PwrTrench | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 15 A | 7 mOhms | Enhancement | PowerTrench | ||||
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GET PRICE |
640
In-stock
|
Fairchild Semiconductor | MOSFET 75a 55V 0.007Ohm NCh UltraFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 75 A | 7 mOhms | Enhancement | UltraFET | ||||
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GET PRICE |
233
In-stock
|
Fairchild Semiconductor | MOSFET 75a 55V 0.007Ohm NCh UltraFET | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 75 A | 7 mOhms | Enhancement | UltraFET | ||||
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GET PRICE |
311
In-stock
|
Infineon Technologies | MOSFET MOSFT 75V 105A 7mOhm 150nC | SMD/SMT | TO-252-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 106 A | 7 mOhms | 4 V | 220 nC | ||||||
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GET PRICE |
1,375
In-stock
|
Infineon Technologies | MOSFET N-CHANNEL_30/40V | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 40 A | 7 mOhms | 2.2 V | 13.7 nC | Enhancement | |||
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GET PRICE |
726
In-stock
|
IR / Infineon | MOSFET Automotive MOSFET 7 mOhm, 56 nC Qg, IPAK | 20 V | Through Hole | TO-251-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 56 V | 7 A | 7 mOhms | 56 nC | Enhancement | ||||
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GET PRICE |
604
In-stock
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IXYS | MOSFET 100 Amps 40V | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 100 A | 7 mOhms | Enhancement | |||||
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GET PRICE |
31
In-stock
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Fairchild Semiconductor | MOSFET 80V N-Channel QFET | 25 V | Through Hole | TO-3PN-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 80 V | 160 A | 7 mOhms | Enhancement | QFET | ||||
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GET PRICE |
106
In-stock
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IXYS | MOSFET 90 Amps 55V 0.0084 Rds | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 90 A | 7 mOhms | 4 V | 42 nC | Enhancement | TrenchT2 | ||
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GET PRICE |
100
In-stock
|
IXYS | MOSFET 100 Amps 40V | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 100 A | 7 mOhms | Enhancement | |||||
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GET PRICE |
2,478
In-stock
|
STMicroelectronics | MOSFET N-Ch 55V 7.0mOh 110W STripFETIII 80A 55V | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 80 A | 7 mOhms | ||||||
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GET PRICE |
800
In-stock
|
Infineon Technologies | MOSFET 75V 1 N-CH HEXFET 7mOhms 150nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 106 A | 7 mOhms | 4 V | 150 nC | Enhancement | |||
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GET PRICE |
1,465
In-stock
|
onsemi | MOSFET Single N-Channel 30V,89A,7mOhm | SMD/SMT | SO-FL-8 | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 89 A | 7 mOhms | ||||||||
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VIEW | Infineon Technologies | MOSFET AUTO 100V 1 N-CH HEXFET 7mOhms | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 44 A | 7 mOhms | Enhancement | ||||||
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VIEW | IXYS | MOSFET 160 Amps 100V 6.9 Rds | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 160 A | 7 mOhms | Enhancement | |||||||
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VIEW | IXYS | MOSFET 160 Amps 100V 6.9 Rds | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 160 A | 7 mOhms | Enhancement | |||||||
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VIEW | IXYS | MOSFET 160 Amps 100V 6.9 Rds | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 160 A | 7 mOhms | Enhancement | |||||||
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VIEW | IXYS | MOSFET 160 Amps 100V 6.9 Rds | Through Hole | TO-3P-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 160 A | 7 mOhms | Enhancement | |||||||
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GET PRICE |
180
In-stock
|
IR / Infineon | MOSFET 100V 1 N-CH HEXFET 7mOhms 170nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 140 A | 7 mOhms | 170 nC | Enhancement | ||||
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GET PRICE |
275
In-stock
|
IR / Infineon | MOSFET 75V 1 N-CH HEXFET 7mOhms 150nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 105 A | 7 mOhms | 2 V to 4 V | 150 nC | Enhancement | |||
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GET PRICE |
828
In-stock
|
Infineon Technologies | MOSFET N-Ch 55V 80A TO220-3 OptiMOS | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 80 A | 7 mOhms | Enhancement | OptiMOS | ||||
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GET PRICE |
137
In-stock
|
Infineon Technologies | MOSFET N-Ch 100V 80A DPAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 80 A | 7 mOhms | 2 V | 55 nC | Enhancement | OptiMOS |
