- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Transistor Polarity :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
13 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,900
In-stock
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Infineon Technologies | MOSFET 60VAUTO GRADE 1 N-CH HEXFET 7mOhms | 20 V | SMD/SMT | DirectFET-M4 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 68 A | 7 mOhms | 35 nC | Enhancement | ||||||
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3,000
In-stock
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Siliconix / Vishay | MOSFET P Ch -30Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 30 A | 7 mOhms | - 2.5 V | 164 nC | Enhancement | |||||
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725
In-stock
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Fairchild Semiconductor | MOSFET 80V 110A N-Chnl PowerTrench MOSFET | 20 V | Through Hole | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 110 A | 7 mOhms | 2 V | 86 nC | Enhancement | PowerTrench | ||||
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1,101
In-stock
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Infineon Technologies | MOSFET MV POWER MOS | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 80 A | 7 mOhms | 2 V | 55 nC | Enhancement | |||||
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2,258
In-stock
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STMicroelectronics | MOSFET Automotive-grade N-channel 40 V, 7 mOhm typ., 54 A STripFE... | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 54 A | 7 mOhms | 2 V | 44 nC | Enhancement | |||||
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311
In-stock
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Infineon Technologies | MOSFET MOSFT 75V 105A 7mOhm 150nC | SMD/SMT | TO-252-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 106 A | 7 mOhms | 4 V | 220 nC | ||||||||
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1,375
In-stock
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Infineon Technologies | MOSFET N-CHANNEL_30/40V | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 40 A | 7 mOhms | 2.2 V | 13.7 nC | Enhancement | |||||
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2,478
In-stock
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STMicroelectronics | MOSFET N-Ch 55V 7.0mOh 110W STripFETIII 80A 55V | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 80 A | 7 mOhms | ||||||||
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800
In-stock
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Infineon Technologies | MOSFET 75V 1 N-CH HEXFET 7mOhms 150nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 106 A | 7 mOhms | 4 V | 150 nC | Enhancement | |||||
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1,465
In-stock
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onsemi | MOSFET Single N-Channel 30V,89A,7mOhm | SMD/SMT | SO-FL-8 | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 89 A | 7 mOhms | ||||||||||
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VIEW | Infineon Technologies | MOSFET AUTO 100V 1 N-CH HEXFET 7mOhms | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 44 A | 7 mOhms | Enhancement | |||||||
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137
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 80A DPAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 80 A | 7 mOhms | 2 V | 55 nC | Enhancement | OptiMOS | ||||
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VIEW | IR / Infineon | MOSFET AUTO 100V 1 N-CH HEXFET 7mOhms | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 44 A | 7 mOhms | Enhancement |