- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Qg - Gate Charge :
- Tradename :
22 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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GET PRICE |
14,250
In-stock
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IR / Infineon | MOSFET MOSFET, 100V, 192A 4.2 mOhm, 170 nC Qg | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 192 A | 4.2 mOhms | 2 V | 170 nC | Enhancement | StrongIRFET | ||
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GET PRICE |
759
In-stock
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IR / Infineon | MOSFET MOSFET, 100V, 192A 4.2 mOhm, 170 nC Qg | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 192 A | 4.2 mOhms | 2 V | 170 nC | Enhancement | StrongIRFET | ||
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GET PRICE |
4,264
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 50A DPAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 50 A | 4.2 mOhms | 1 V | 31 nC | Enhancement | OptiMOS | ||
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GET PRICE |
1,060
In-stock
|
Infineon Technologies | MOSFET MOSFET N CH 60V 110A D2PAK | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 110 A | 4.2 mOhms | 3.7 V | 88 nC | StrongIRFET | |||
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GET PRICE |
498
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 80A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 80 A | 4.2 mOhms | 1.2 V | 50 nC | Enhancement | OptiMOS | ||
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GET PRICE |
1,182
In-stock
|
Infineon Technologies | MOSFET TRENCH_MOSFETS | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 90 A | 4.2 mOhms | 2.2 V | 68 nC | Enhancement | StrongIRFET | ||
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GET PRICE |
416
In-stock
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Infineon Technologies | MOSFET MOSFET N CH 60V 110A TO-220AB | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 110 A | 4.2 mOhms | 3.7 V | 88 nC | StrongIRFET | |||
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GET PRICE |
1,380
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 70A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 70 A | 4.2 mOhms | 2.2 V | 18 nC | Enhancement | OptiMOS | ||
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GET PRICE |
61
In-stock
|
IXYS | MOSFET 230 Amps 75V | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 230 A | 4.2 mOhms | 2 V | 178 nC | Enhancement | |||
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GET PRICE |
2,050
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 50A DPAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 50 A | 4.2 mOhms | 1 V | 31 nC | Enhancement | OptiMOS | ||
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GET PRICE |
1,010
In-stock
|
Infineon Technologies | MOSFET N-Ch 40V 80A D2PAK-2 OptiMOS-T2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 80 A | 4.2 mOhms | 33 nC | OptiMOS | ||||
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GET PRICE |
955
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 80A D2PAK-2 OptiMOS-T2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 80 A | 4.2 mOhms | 33 nC | OptiMOS | ||||
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GET PRICE |
825
In-stock
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onsemi | MOSFET NFET U8FL 30V 71A 4.2MOHM | 20 V | SMD/SMT | WDFN-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 71 A | 4.2 mOhms | 2.2 V | 26 nC | ||||
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GET PRICE |
66
In-stock
|
IXYS | MOSFET 200 Amps 55V 0.0042 Rds | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 200 A | 4.2 mOhms | Enhancement | |||||
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GET PRICE |
1,000
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 65 A | 4.2 mOhms | 4.5 V | 117 nC | Enhancement | |||
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GET PRICE |
1,500
In-stock
|
onsemi | MOSFET AFSM T6 60V LL U8FL WF | +/- 20 V | SMD/SMT | WDFN-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 109 A | 4.2 mOhms | 1.2 V | 27 nC | Enhancement | |||
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GET PRICE |
1,500
In-stock
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onsemi | MOSFET AFSM T6 60V LL U8FL | +/- 20 V | SMD/SMT | WDFN-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 109 A | 4.2 mOhms | 1.2 V | 27 nC | Enhancement | |||
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VIEW | Infineon Technologies | MOSFET N-Ch 60V 80A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 80 A | 4.2 mOhms | 1.2 V | 50 nC | Enhancement | OptiMOS | |||
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GET PRICE |
609
In-stock
|
IR / Infineon | MOSFET Auto 60V Sngl N-Ch HEXFET PowerMOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 160 A | 4.2 mOhms | 4 V | 85 nC | ||||
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VIEW | Infineon Technologies | MOSFET Auto 60V Sngl N-Ch HEXFET PowerMOSFET | SMD/SMT | TO-252-3 | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 160 A | 4.2 mOhms | 85 nC | ||||||||
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GET PRICE |
485
In-stock
|
STMicroelectronics | MOSFET N-Ch 100V 0.0036Ohm typ. 110A | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 110 A | 4.2 mOhms | 4.5 V | 117 nC | ||||
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VIEW | Infineon Technologies | MOSFET N-Ch 40V 80A TO220-3 OptiMOS-T | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 80 A | 4.2 mOhms | Enhancement | OptiMOS |
