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7 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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759
In-stock
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IR / Infineon | MOSFET MOSFET, 100V, 192A 4.2 mOhm, 170 nC Qg | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 192 A | 4.2 mOhms | 2 V | 170 nC | Enhancement | StrongIRFET | ||||
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4,264
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 50A DPAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 50 A | 4.2 mOhms | 1 V | 31 nC | Enhancement | OptiMOS | ||||
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1,060
In-stock
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Infineon Technologies | MOSFET MOSFET N CH 60V 110A D2PAK | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 110 A | 4.2 mOhms | 3.7 V | 88 nC | StrongIRFET | |||||
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1,182
In-stock
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Infineon Technologies | MOSFET TRENCH_MOSFETS | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 90 A | 4.2 mOhms | 2.2 V | 68 nC | Enhancement | StrongIRFET | ||||
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2,050
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 50A DPAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 50 A | 4.2 mOhms | 1 V | 31 nC | Enhancement | OptiMOS | ||||
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609
In-stock
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IR / Infineon | MOSFET Auto 60V Sngl N-Ch HEXFET PowerMOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 160 A | 4.2 mOhms | 4 V | 85 nC | ||||||
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VIEW | Infineon Technologies | MOSFET Auto 60V Sngl N-Ch HEXFET PowerMOSFET | SMD/SMT | TO-252-3 | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 160 A | 4.2 mOhms | 85 nC |