- Manufacture :
- Mounting Style :
- Package / Case :
- Id - Continuous Drain Current :
- Qg - Gate Charge :
- Tradename :
6 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,750
In-stock
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Fairchild Semiconductor | MOSFET N-Channel Power Trench MOSFET | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 17.6 A | 34 mOhms | 1.9 V | 17 nC | UltraFET | ||||
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GET PRICE |
2,489
In-stock
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IR / Infineon | MOSFET MOSFT 100V 31A 39mOhm 37nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 31 A | 34 mOhms | 4 V | 37 nC | |||||
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GET PRICE |
1,318
In-stock
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Fairchild Semiconductor | MOSFET 35A 55V N-Channel UltraFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 35 A | 34 mOhms | Enhancement | UltraFET | |||||
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GET PRICE |
56
In-stock
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IXYS | MOSFET 74 Amps 200V 0.034 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 74 A | 34 mOhms | 5 V | 107 nC | Enhancement | PolarHT, HiPerFET | |||
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GET PRICE |
40
In-stock
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IXYS | MOSFET 74 Amps 200V 0.034 Rds | 20 V | Through Hole | TO-3P-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 74 A | 34 mOhms | Enhancement | ||||||
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GET PRICE |
28
In-stock
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IXYS | MOSFET 74 Amps 200V 0.034 Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 74 A | 34 mOhms | 5 V | 107 nC | Enhancement | PolarHT |