- Manufacture :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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800
In-stock
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IR / Infineon | MOSFET 75V Single N-Channel HEXFET | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 246 A | 2.6 mOhms | 3.7 V | 271 nC | Enhancement | StrongIRFET | |||
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590
In-stock
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IR / Infineon | MOSFET 75V Single N-Channel HEXFET | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 76 A | 8.4 mOhms | 3.7 V | 73 nC | StrongIRFET | ||||
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549
In-stock
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Infineon Technologies | MOSFET 75V Single N-Channel HEXFET | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 183 A | 3.5 mOhms | 3.7 V | 180 nC | Enhancement | StrongIRFET |
