MOSFET - Kaimeite

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7 products

IMAGE	PART NO.	PRICE	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Vgs - Gate-Source Voltage	Mounting Style	Package / Case	Minimum Operating Temperature	Maximum Operating Temperature	Packaging	Number of Channels	Technology	Transistor Polarity	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Rds On - Drain-Source Resistance	Vgs th - Gate-Source Threshold Voltage	Qg - Gate Charge	Channel Mode	Tradename
	IRFB4332PBF		GET PRICE	PDF RFQ	7,650 In-stock	Infineon Technologies	MOSFET MOSFT 250V 60A 33mOhm 99nC Qg	30 V	Through Hole	TO-220-3	- 40 C	+ 175 C	Tube	1 Channel	Si	N-Channel	250 V	60 A	33 mOhms		99 nC	Enhancement
	IPP027N08N5AKSA1		GET PRICE	PDF RFQ	395 In-stock	Infineon Technologies	MOSFET N-Ch 80V 120A TO220-3	20 V	Through Hole	TO-220-3	- 55 C	+ 175 C	Tube	1 Channel	Si	N-Channel	80 V	120 A	3.4 mOhms	2.2 V	99 nC	Enhancement
	IRFP4332PBF		GET PRICE	PDF RFQ	24,300 In-stock	Infineon Technologies	MOSFET MOSFT 250V 57A 33mOhm 99nC Qg	30 V	Through Hole	TO-247-3	- 40 C	+ 175 C	Tube	1 Channel	Si	N-Channel	250 V	57 A	33 mOhms		99 nC	Enhancement
	STP80N70F6		GET PRICE	PDF RFQ	448 In-stock	STMicroelectronics	MOSFET N-Ch 68V 0.0063Ohm 96A STripFET VI		Through Hole	TO-220-3	- 55 C	+ 175 C	Tube		Si	N-Channel	68 V	96 A	8 mOhms		99 nC
	IPB024N08N5ATMA1		GET PRICE	PDF RFQ	370 In-stock	Infineon Technologies	MOSFET N-Ch 80V 120A D2PAK-2	20 V	SMD/SMT	TO-263-3	- 55 C	+ 175 C	Reel	1 Channel	Si	N-Channel	80 V	120 A	3.1 mOhms	2.2 V	99 nC	Enhancement
	TPH1R005PL,L1Q		GET PRICE	PDF RFQ	4,096 In-stock	Toshiba	MOSFET POWER MOSFET TRANSISTOR PD=170W	20 V	SMD/SMT	SOP-Advance-8	- 55 C	+ 175 C	Reel	1 Channel	Si	N-Channel	45 V	150 A	1.7 mOhms	1.4 V	99 nC	Enhancement
	IPB90N06S4-04		GET PRICE	PDF RFQ	575 In-stock	Infineon Technologies	MOSFET N-Ch 60V 90A D2PAK-2 OptiMOS-T2	20 V	SMD/SMT	TO-263-3	- 55 C	+ 175 C	Reel	1 Channel	Si	N-Channel	60 V	90 A	3.7 mOhms		99 nC		OptiMOS

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