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- Rds On - Drain-Source Resistance :
4 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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GET PRICE |
7,650
In-stock
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Infineon Technologies | MOSFET MOSFT 250V 60A 33mOhm 99nC Qg | 30 V | Through Hole | TO-220-3 | - 40 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 250 V | 60 A | 33 mOhms | 99 nC | Enhancement | ||||
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395
In-stock
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Infineon Technologies | MOSFET N-Ch 80V 120A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 80 V | 120 A | 3.4 mOhms | 2.2 V | 99 nC | Enhancement | ||||
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24,300
In-stock
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Infineon Technologies | MOSFET MOSFT 250V 57A 33mOhm 99nC Qg | 30 V | Through Hole | TO-247-3 | - 40 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 250 V | 57 A | 33 mOhms | 99 nC | Enhancement | |||||
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448
In-stock
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STMicroelectronics | MOSFET N-Ch 68V 0.0063Ohm 96A STripFET VI | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | Si | N-Channel | 68 V | 96 A | 8 mOhms | 99 nC |