- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Transistor Polarity :
- Rds On - Drain-Source Resistance :
- Tradename :
12 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,663
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 90A DPAK-2 OptiMOS-T2 | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 90 A | 1.8 mOhms | 1 V | 140 nC | Enhancement | OptiMOS | ||||
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700
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 80A TO220-3 OptiMOS-T2 | 16 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 80 A | 2.3 mOhms | 1 V | 140 nC | Enhancement | OptiMOS | ||||
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1,192
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 80A D2PAK-2 OptiMOS-T2 | 16 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 80 A | 2 mOhms | 1 V | 140 nC | Enhancement | OptiMOS | ||||
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37
In-stock
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IR / Infineon | MOSFET 40V 1 N-CH HEXFET 4mOhms 93.3nC | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 160 A | 5.9 mOhms | 3 V | 140 nC | Enhancement | |||||
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50
In-stock
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IXYS | MOSFET TRENCHT2 PWR MOSFET 55V 260A | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | Si | N-Channel | 55 V | 260 A | 3.3 mOhms | 4 V | 140 nC | Enhancement | TrenchT2 | |||||
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37
In-stock
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IXYS | MOSFET 260 Amps 55V | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Tube | Si | N-Channel | 55 V | 260 A | 3.3 mOhms | 4 V | 140 nC | Enhancement | TrenchT2 | |||||
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93
In-stock
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Texas instruments | MOSFET 60V, N-Channel NexFET Power MOSFET 3-DDPAK/TO-... | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 200 A | 1.3 mOhms | 1.8 V | 140 nC | Enhancement | NexFET | ||||
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235
In-stock
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Texas instruments | MOSFET 60V, N-Channel NexFET Power MOSFET 3-DDPAK/TO-... | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 200 A | 1.3 mOhms | 1.8 V | 140 nC | Enhancement | NexFET | ||||
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13,460
In-stock
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Vishay Semiconductors | MOSFET 60V 30A 83W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 30 A | 0.013 Ohms | - 2.5 V | 140 nC | Enhancement | TrenchFET | ||||
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VIEW | Infineon Technologies | MOSFET N-Ch 30V 80A TO220-3 OptiMOS-T2 | 16 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 80 A | 2.3 mOhms | 1 V | 140 nC | Enhancement | |||||
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VIEW | Infineon Technologies | MOSFET N-Ch 30V 80A D2PAK-2 OptiMOS-T2 | 16 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 80 A | 2 mOhms | 1 V | 140 nC | Enhancement | |||||
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VIEW | Infineon Technologies | MOSFET N-Ch 30V 90A DPAK-2 OptiMOS-T2 | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 90 A | 1.8 mOhms | 1 V | 140 nC | Enhancement |