- Vgs - Gate-Source Voltage :
- Package / Case :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Tradename :
7 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
2,663
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 90A DPAK-2 OptiMOS-T2 | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 90 A | 1.8 mOhms | 1 V | 140 nC | Enhancement | OptiMOS | ||||
|
1,192
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 80A D2PAK-2 OptiMOS-T2 | 16 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 80 A | 2 mOhms | 1 V | 140 nC | Enhancement | OptiMOS | ||||
|
93
In-stock
|
Texas instruments | MOSFET 60V, N-Channel NexFET Power MOSFET 3-DDPAK/TO-... | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 200 A | 1.3 mOhms | 1.8 V | 140 nC | Enhancement | NexFET | ||||
|
235
In-stock
|
Texas instruments | MOSFET 60V, N-Channel NexFET Power MOSFET 3-DDPAK/TO-... | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 200 A | 1.3 mOhms | 1.8 V | 140 nC | Enhancement | NexFET | ||||
|
13,460
In-stock
|
Vishay Semiconductors | MOSFET 60V 30A 83W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 30 A | 0.013 Ohms | - 2.5 V | 140 nC | Enhancement | TrenchFET | ||||
|
VIEW | Infineon Technologies | MOSFET N-Ch 30V 80A D2PAK-2 OptiMOS-T2 | 16 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 80 A | 2 mOhms | 1 V | 140 nC | Enhancement | |||||
|
VIEW | Infineon Technologies | MOSFET N-Ch 30V 90A DPAK-2 OptiMOS-T2 | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 90 A | 1.8 mOhms | 1 V | 140 nC | Enhancement |