semiconductors-Integrated Circuits - ICs - Kaimeite

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IMAGE	PART NO.	PRICE	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Product	Vgs - Gate-Source Voltage	Mounting Style	Package / Case	Minimum Operating Temperature	Maximum Operating Temperature	Packaging	Number of Channels	Length	Width	Height	Pd - Power Dissipation	Configuration	Technology	Transistor Polarity	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Rds On - Drain-Source Resistance	Vgs th - Gate-Source Threshold Voltage	Channel Mode	Rise Time	Fall Time	Transistor Type	Typical Turn-Off Delay Time	Typical Turn-On Delay Time	Product Category	unit weight	Factory Pack Quantity	RoHS	Id - Continuous Drain Curren
	2SK2842		GET PRICE	PDF RFQ	6,551 In-stock	Toshiba Semiconductor	MOSFET 220NIS2 PLN,DISCON(08-10)/PHASE-OUT(11-01)/OB...		30 V	SMD/SMT	SC-62-3	- 55 C	+ 150 C	Reel	1 Channel	4.6 mm	2.5 mm	1.6 mm	40 W	Single	Si	N-Channel	500 V	12 A	520 mOhms		Enhancement	22 ns	36 ns	1 N-Channel					50
	2SK2998		GET PRICE	PDF RFQ	8,755 In-stock	Toshiba Semiconductor	MOSFET	MOSFET Small Signal	30 V	Through Hole	TO-92-3	- 55 C	+ 150 C		1 Channel	5.1 mm	4.1 mm	8.2 mm	900 mW	Single	Si	N-Channel	500 V	500 mA	18 Ohms		Enhancement		11 ns
	2SK3131		GET PRICE	PDF RFQ	23,511 In-stock	Toshiba Semiconductor	MOSFET 3PL PLN,ACTIVE,DISCON(08-10)/PHASE-OUT(10-...		30 V	Through Hole	TO-3PL-3	- 55 C	+ 150 C	Reel	1 Channel	20 mm	5 mm	26 mm	250 W	Single	Si	N-Channel	500 V	50 A	110 mOhms		Enhancement	105 ns	65 ns		51 ns	20 ns	MOSFET
	HUF76143S3		GET PRICE	PDF RFQ	50,000 In-stock	onsemi	MOSFET 75a 30V 0.0055 Ohm Logic Level N-Ch		16 V	Through Hole		- 40 C	+ 150 C	Tube	1 Channel	6.8 mm	2.5 mm	6.3 mm	225 W	Single	Si	N-Channel	30 V		5.5 mOhms		Enhancement	145 ns, 55 ns	18 ns	1 N-Channel	30 ns, 40 ns	22 ns, 14 ns		0.084199 oz	50	N	75 A
	SSM3K35FS(T5L,F,T)		GET PRICE	PDF RFQ	40,000 In-stock	Toshiba Semiconductor	MOSFET		4 V	SMD/SMT			+ 150 C		1 Channel	1.6 mm	0.8 mm	0.7 mm	100 mW	Single	Si	N-Channel	20 V	180 mA	3 Ohms	400 mV	Enhancement			1 N-Channel	300 ns	115 ns

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