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Vf - Forward Voltage :
Vgs - Gate-Source Voltage :
Minimum Operating Temperature :
Number of Channels :
If - Forward Current :
Peak Reverse Voltage :
Ir - Reverse Current :
Transistor Polarity :
Collector- Base Voltage VCBO :
Emitter- Base Voltage VEBO :
Gain Bandwidth Product fT :
Vds - Drain-Source Breakdown Voltage :
Id - Continuous Drain Current :
DC Collector/Base Gain hfe Min :
Factory packaging quantity :
Id-continuous drain current :
20 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Product Vf - Forward Voltage Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels If - Forward Current Peak Reverse Voltage Length Width Height Pd - Power Dissipation Configuration Ir - Reverse Current Ifsm - Forward Surge Current Technology Transistor Polarity Collector- Emitter Voltage VCEO Max Collector- Base Voltage VCBO Emitter- Base Voltage VEBO Collector-Emitter Saturation Voltage Gain Bandwidth Product fT Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Channel Mode DC Collector/Base Gain hfe Min Continuous Collector Current Rise Time Fall Time Transistor Type Product Type Package Types of Typical Turn-Off Delay Time Typical Turn-On Delay Time Subcategory Product Category Factory packaging quantity unit weight Factory Pack Quantity Maximum surge current RoHS Id - Continuous Drain Curren Vds-drain source breakdown voltage Id-continuous drain current Rds On-drain source on-resistance Pd-power dissipation Typical shutdown delay time Typical on-delay time range of working temperature Vrrm - Repeated reverse voltage Collector-emitter maximum voltage VCEO Emitter - base voltage VEBO Collector continuous current DC Current Gain hFE Max
FDS6986S
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11,150
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ON Semiconductor MOSFET 30V Dual SyncFET     16 V, 20 V SMD/SMT SO-8 - 55 C + 150 C Reel 2 Channel     4.9 mm 3.9 mm 1.75 mm 2 W Dual     Si N-Channel           30 V 6.5 A 29 mOhms   Enhancement     4.5 ns, 5 ns 2.5 ns, 11 ns 2 N-Channel       20 ns, 25 ns 7 ns, 8 ns         2500                              
2SK2842
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RFQ
6,551
In-stock
Toshiba Semiconductor MOSFET 220NIS2 PLN,DISCON(08-10)/PHASE-OUT(11-01)/OB...     30 V SMD/SMT SC-62-3 - 55 C + 150 C Reel 1 Channel     4.6 mm 2.5 mm 1.6 mm 40 W Single     Si N-Channel           500 V 12 A 520 mOhms   Enhancement     22 ns 36 ns 1 N-Channel                   50                              
2SC3709A
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RFQ
8,533
In-stock
Toshiba Semiconductor Bipolar Transistors - BJT             + 150 C               30 W Single       NPN 50 V 60 V 6 V   90 MHz           120                   Transistors                                      
2SK2381
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RFQ
7,800
In-stock
Toshiba Semiconductor MOSFET 220NIS2 PLN, DISCON(08-10)/PHASE-OUT(11-01)/OB...     20 V   TO-220FP-3 - 55 C + 150 C   1 Channel     10 mm 4.5 mm 15 mm   Single     Si N-Channel                   Enhancement     15 ns 15 ns     Reel                       200 V 5 A 800 mOhms 25 W 67 ns 41 ns            
2SK2699
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RFQ
13,555
In-stock
Toshiba Semiconductor MOSFET     30 V     - 55 C + 150 C   1 Channel     15.5 mm 4.5 mm 20 mm   Single     Si N-Channel                   Enhancement     45 ns 65 ns                             600 V 12 A 650 mOhms 150 W 150 ns 35 ns            
2SK2750
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RFQ
23,356
In-stock
Toshiba Semiconductor MOSFET 220NIS2 PLN,DISCON(08-10)/PHASE-OUT(11-01)/OB...     30 V     - 55 C + 150 C   1 Channel     10.16 mm 4.45 mm 15.1 mm   Single     Si N-Channel                   Enhancement     15 ns 15 ns 1 N-Channel   Reel                       600 V 3.5 A 2.2 Ohms 35 W 8 ns 2 ns            
2SK2915
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RFQ
14,555
In-stock
Toshiba Semiconductor MOSFET     30 V     - 55 C + 150 C   1 Channel     15.5 mm 4.5 mm 20 mm   Single     Si N-Channel                   Enhancement     50 ns 60 ns                             600 V 16 A 400 mOhms 150 W 155 ns 35 ns            
2SK2998
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RFQ
8,755
In-stock
Toshiba Semiconductor MOSFET MOSFET Small Signal   30 V Through Hole TO-92-3 - 55 C + 150 C   1 Channel     5.1 mm 4.1 mm 8.2 mm 900 mW Single     Si N-Channel           500 V 500 mA 18 Ohms   Enhancement       11 ns                                                    
2SK3131
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RFQ
23,511
In-stock
Toshiba Semiconductor MOSFET 3PL PLN,ACTIVE,DISCON(08-10)/PHASE-OUT(10-...     30 V Through Hole TO-3PL-3 - 55 C + 150 C Reel 1 Channel     20 mm 5 mm 26 mm 250 W Single     Si N-Channel           500 V 50 A 110 mOhms   Enhancement     105 ns 65 ns         51 ns 20 ns   MOSFET                                    
2SC4834
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RFQ
13,500
In-stock
Shindengen Bipolar Transistor - Bipolar Junction Transistor (BJT)             + 150 C                         NPN         13 MHz                     BJTs - Bipolar Transistors         Transistors   50 2.300 g     N         45 W         400 V 7 V 8 A  
S1WBA60
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RFQ
45,000
In-stock
Shindengen Bridge Rectifier Bridge   1 V     PDIP-4 - 40 C + 150 C     1 A 600 V 10.5 mm 6.5 mm 3.1 mm     10 uA                                       Reel       Diodes & Rectifiers Bridge Rectifier   640 mg   30 A                            
12CWQ10FNTRPBF
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RFQ
15,600
In-stock
Vishay Semiconductors Schottky Diodes & Rectifiers 12 Amp 100 Volt Common Cathode Schottky Rectifiers 0.95 V       - 55 C + 150 C     12 A   6.73 mm 6.22 mm 2.39 mm   Dual Common Cathode 1000 uA 330 A Si                                 Schottky Diodes & Rectifiers   Schottky Diode       Schottky diodes and rectifiers 2000 300 mg                     - 55 C to + 150 C 100 V        
TPCS8204
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RFQ
45,000
In-stock
Toshiba Semiconductor MOSFET     12 V SMD/SMT TSSOP-Advance-8 - 55 C + 150 C   2 Channel     3.65 mm 3.5 mm 0.75 mm 1.1 W Dual     Si N-Channel           20 V 6 A 17 mOhms   Enhancement     5 ns 10 ns                                                    
2SK2837
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RFQ
7,500
In-stock
Toshiba Semiconductor     30 V     - 55 C + 150 C   1 Channel     15.5 mm 4.5 mm 20 mm   Single     Si N-Channel                   Enhancement     30 ns 50 ns                             500 V 20 A 270 mOhms 150 W 71 ns 23 ns            
FDQ7238S
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RFQ
22,500
In-stock
ON Semiconductor MOSFET N-Channel PowerTrench     16 V     - 55 C + 150 C   2 Channel     8.6 mm 3.9 mm 1.45 mm   Dual     Si N-Channel                   Enhancement       13 ns     Reel           2500 338 mg         30 V 14 A 7 mOhms 2.4 W 28 ns, 51 ns 11 ns, 14 ns            
HUF76143S3
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RFQ
50,000
In-stock
ON Semiconductor MOSFET 75a 30V 0.0055 Ohm Logic Level N-Ch     16 V Through Hole   - 40 C + 150 C Tube 1 Channel     6.8 mm 2.5 mm 6.3 mm 225 W Single     Si N-Channel           30 V   5.5 mOhms   Enhancement     145 ns, 55 ns 18 ns 1 N-Channel       30 ns, 40 ns 22 ns, 14 ns       0.084199 oz 50   N 75 A                        
S1ZB20
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RFQ
50,050
In-stock
Shindengen Bridge Rectifier Bridge   1.05 V     DIP SMT - 40 C + 150 C       200 V 4.7 mm 3.8 mm 2.5 mm     10 uA                                         Single Phase Bridge     Diodes & Rectifiers Bridge Rectifier       30 A                            
SSL4101T
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RFQ
45,000
In-stock
NXP Semiconductors Power Factor Correction - PFC Medium Power SSL Driver           - 55 C + 150 C                                                           MouseReel       PMIC - Power Management ICs Power Factor Correction - PFC 2500 666 mg                                
SSM3K35FS(T5L,F,T)
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RFQ
40,000
In-stock
Toshiba Semiconductor MOSFET     4 V SMD/SMT     + 150 C   1 Channel     1.6 mm 0.8 mm 0.7 mm 100 mW Single     Si N-Channel           20 V 180 mA 3 Ohms 400 mV Enhancement         1 N-Channel       300 ns 115 ns                                        
A1941
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RFQ
8,623
In-stock
Toshiba       Through Hole     + 150 C               100 W Single     Si PNP - 140 V - 140 V - 5 V 2 V 30 MHz           35 10 A       BJTs - Bipolar Transistors             4000                                 83
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