Build a global manufacturer and supplier trusted trading platform.
6 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Product Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Length Width Height Pd - Power Dissipation Configuration Technology Transistor Polarity Collector- Emitter Voltage VCEO Max Collector- Base Voltage VCBO Emitter- Base Voltage VEBO Maximum DC Collector Current Gain Bandwidth Product fT Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Channel Mode DC Collector/Base Gain hfe Min Rise Time Fall Time Transistor Type Typical Turn-Off Delay Time Typical Turn-On Delay Time Subcategory Product Category Factory Pack Quantity
2SK2842
GET PRICE
RFQ
6,551
In-stock
Toshiba Semiconductor MOSFET 220NIS2 PLN,DISCON(08-10)/PHASE-OUT(11-01)/OB...   30 V SMD/SMT SC-62-3 - 55 C + 150 C Reel 1 Channel 4.6 mm 2.5 mm 1.6 mm 40 W Single Si N-Channel           500 V 12 A 520 mOhms   Enhancement   22 ns 36 ns 1 N-Channel         50
2SC3709A
GET PRICE
RFQ
8,533
In-stock
Toshiba Semiconductor Bipolar Transistors - BJT           + 150 C           30 W Single   NPN 50 V 60 V 6 V 12 A 90 MHz           120           Transistors    
2SK2998
GET PRICE
RFQ
8,755
In-stock
Toshiba Semiconductor MOSFET MOSFET Small Signal 30 V Through Hole TO-92-3 - 55 C + 150 C   1 Channel 5.1 mm 4.1 mm 8.2 mm 900 mW Single Si N-Channel           500 V 500 mA 18 Ohms   Enhancement     11 ns            
2SK3131
GET PRICE
RFQ
23,511
In-stock
Toshiba Semiconductor MOSFET 3PL PLN,ACTIVE,DISCON(08-10)/PHASE-OUT(10-...   30 V Through Hole TO-3PL-3 - 55 C + 150 C Reel 1 Channel 20 mm 5 mm 26 mm 250 W Single Si N-Channel           500 V 50 A 110 mOhms   Enhancement   105 ns 65 ns   51 ns 20 ns   MOSFET  
TPCS8204
GET PRICE
RFQ
45,000
In-stock
Toshiba Semiconductor MOSFET   12 V SMD/SMT TSSOP-Advance-8 - 55 C + 150 C   2 Channel 3.65 mm 3.5 mm 0.75 mm 1.1 W Dual Si N-Channel           20 V 6 A 17 mOhms   Enhancement   5 ns 10 ns            
SSM3K35FS(T5L,F,T)
GET PRICE
RFQ
40,000
In-stock
Toshiba Semiconductor MOSFET   4 V SMD/SMT     + 150 C   1 Channel 1.6 mm 0.8 mm 0.7 mm 100 mW Single Si N-Channel           20 V 180 mA 3 Ohms 400 mV Enhancement       1 N-Channel 300 ns 115 ns      
Page 1 / 1