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Gain Bandwidth Product fT :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Maximum Operating Temperature Pd - Power Dissipation Configuration Transistor Polarity Collector- Emitter Voltage VCEO Max Collector- Base Voltage VCBO Emitter- Base Voltage VEBO Maximum DC Collector Current Gain Bandwidth Product fT DC Collector/Base Gain hfe Min Product Type Subcategory Installation style Factory packaging quantity unit weight RoHS Pd-power dissipation Collector-emitter maximum voltage VCEO Collector - base voltage VCBO Emitter - base voltage VEBO Collector continuous current
2SC3709A
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RFQ
8,533
In-stock
Toshiba Semiconductor Bipolar Transistors - BJT + 150 C 30 W Single NPN 50 V 60 V 6 V 12 A 90 MHz 120   Transistors                  
2SC4834
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RFQ
13,500
In-stock
Shindengen Bipolar Transistor - Bipolar Junction Transistor (BJT) + 150 C     NPN       8 A 13 MHz   BJTs - Bipolar Transistors Transistors Through Hole 50 2.300 g N 45 W 400 V 500 V 7 V 8 A
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