semiconductors-Integrated Circuits - ICs - Kaimeite

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IMAGE	PART NO.	PRICE	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Product	Vgs - Gate-Source Voltage	Mounting Style	Package / Case	Minimum Operating Temperature	Maximum Operating Temperature	Packaging	Number of Channels	Length	Width	Height	Pd - Power Dissipation	Configuration	Technology	Transistor Polarity	Collector- Base Voltage VCBO	Emitter- Base Voltage VEBO	Collector-Emitter Saturation Voltage	Gain Bandwidth Product fT	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Rds On - Drain-Source Resistance	Channel Mode	DC Collector/Base Gain hfe Min	Continuous Collector Current	Rise Time	Fall Time	Transistor Type	Product Type	Typical Turn-Off Delay Time	Typical Turn-On Delay Time	Product Category	Factory packaging quantity	unit weight	Factory Pack Quantity	RoHS	Id - Continuous Drain Curren	DC Current Gain hFE Max
	2SK2998		GET PRICE	PDF RFQ	8,755 In-stock	Toshiba Semiconductor	MOSFET	MOSFET Small Signal	30 V	Through Hole	TO-92-3	- 55 C	+ 150 C		1 Channel	5.1 mm	4.1 mm	8.2 mm	900 mW	Single	Si	N-Channel					500 V	500 mA	18 Ohms	Enhancement				11 ns
	2SK3131		GET PRICE	PDF RFQ	23,511 In-stock	Toshiba Semiconductor	MOSFET 3PL PLN,ACTIVE,DISCON(08-10)/PHASE-OUT(10-...		30 V	Through Hole	TO-3PL-3	- 55 C	+ 150 C	Reel	1 Channel	20 mm	5 mm	26 mm	250 W	Single	Si	N-Channel					500 V	50 A	110 mOhms	Enhancement			105 ns	65 ns			51 ns	20 ns	MOSFET
	HUF76143S3		GET PRICE	PDF RFQ	50,000 In-stock	onsemi	MOSFET 75a 30V 0.0055 Ohm Logic Level N-Ch		16 V	Through Hole		- 40 C	+ 150 C	Tube	1 Channel	6.8 mm	2.5 mm	6.3 mm	225 W	Single	Si	N-Channel					30 V		5.5 mOhms	Enhancement			145 ns, 55 ns	18 ns	1 N-Channel		30 ns, 40 ns	22 ns, 14 ns			0.084199 oz	50	N	75 A
	A1941		GET PRICE	PDF RFQ	8,623 In-stock	Toshiba				Through Hole			+ 150 C						100 W	Single	Si	PNP	- 140 V	- 5 V	2 V	30 MHz					35	10 A				BJTs - Bipolar Transistors				4000					83

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