- Mounting Style :
- Package / Case :
- Collector- Emitter Voltage VCEO Max :
- Collector-Emitter Saturation Voltage :
6 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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57,400
In-stock
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Infineon Technologies | IGBT Transistors 600V Warp2 150kHz | Through Hole | TO-220-3 | + 150 C | Tube | 215 W | Single | 600 V | 2.05 V | 40 A | 100 nA | +/- 20 V | ||
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202
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Infineon Technologies | IGBT Transistors 1200V UltraFast 5-40kHz Single IGBT | Through Hole | TO-247-3 | + 150 C | Tube | 300 W | Single | 1.2 kV | 3.05 V | 40 A | 100 nA | +/- 20 V | |||
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309
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Infineon Technologies | IGBT Transistors 600V WARP 60-150 KHZ DISCRETE IGBT | SMD/SMT | D-PAK-3 | + 150 C | Tube | 160 W | Single | 600 V | 2.05 V | 40 A | 100 nA | +/- 20 V | |||
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115
In-stock
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Infineon Technologies | IGBT Transistors 600V Warp 60-150kHz | Through Hole | TO-262-3 | + 150 C | Tube | 160 W | Single | 600 V | 2.5 V | 40 A | +/- 20 V | ||||
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29
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Infineon Technologies | IGBT Transistors 600V UltraFast 8-60kHz | Through Hole | TO-247-3 | + 150 C | Tube | 160 W | Single | 600 V | 1.72 V | 40 A | 100 nA | +/- 20 V | |||
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VIEW | Infineon Technologies | IGBT Transistors 1200V ULTRAFAST 5-40 KHZ COPACK IGBT | Through Hole | TO-247-3 | + 150 C | Tube | 300 W | Single | 1.2 kV | 3.05 V | 40 A | +/- 20 V |