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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
NGTB20N120IHRWG
1+
$4.500
10+
$3.830
100+
$3.320
250+
$3.150
RFQ
510
In-stock
onsemi IGBT Transistors 1200V/20A RC IGBT FSII Through Hole TO-247 + 175 C Tube 384 W Single 1200 V 2.1 V 40 A 100 nA 20 V
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