- Package / Case :
- Maximum Operating Temperature :
- Collector- Emitter Voltage VCEO Max :
- Gate-Emitter Leakage Current :
- Maximum Gate Emitter Voltage :
5 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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2,710
In-stock
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onsemi | IGBT Transistors Dis High Perf IGBT | Through Hole | TO-3P-3 | + 150 C | Tube | 160 W | Single | 600 V | 2.1 V | 40 A | +/- 100 nA | +/- 20 V | |||
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301
In-stock
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onsemi | IGBT Transistors 650V/40A FAST IGBT FSII T | Through Hole | TO-247-3 | + 175 C | Tube | 366 W | Single | 650 V | 2.1 V | 80 A | 200 nA | 20 V | ||||
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510
In-stock
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onsemi | IGBT Transistors 1200V/20A RC IGBT FSII | Through Hole | TO-247 | + 175 C | Tube | 384 W | Single | 1200 V | 2.1 V | 40 A | 100 nA | 20 V | ||||
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163
In-stock
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onsemi | IGBT Transistors LC IH RC OSV | Through Hole | TO-247-3 | + 175 C | Tube | 278 W | Single | 1.2 kV | 2.1 V | 30 A | 100 nA | +/- 20 V | ||||
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3,400
In-stock
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onsemi | IGBT Transistors Dis High Perf IGBT | Through Hole | TO-264-3 | + 150 C | Tube | 250 W | Single | 600 V | 2.1 V | 160 A | +/- 100 nA | +/- 20 V |