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Package / Case :
Pd - Power Dissipation :
Collector- Emitter Voltage VCEO Max :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
NGTB40N65FL2WG
1+
$5.250
10+
$4.460
100+
$3.870
250+
$3.670
RFQ
301
In-stock
onsemi IGBT Transistors 650V/40A FAST IGBT FSII T Through Hole TO-247-3 + 175 C Tube 366 W Single 650 V 2.1 V 80 A 200 nA 20 V
NGTB20N120IHRWG
1+
$4.500
10+
$3.830
100+
$3.320
250+
$3.150
RFQ
510
In-stock
onsemi IGBT Transistors 1200V/20A RC IGBT FSII Through Hole TO-247 + 175 C Tube 384 W Single 1200 V 2.1 V 40 A 100 nA 20 V
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