- Package / Case :
- Maximum Operating Temperature :
- Collector- Emitter Voltage VCEO Max :
- Collector-Emitter Saturation Voltage :
- Maximum Gate Emitter Voltage :
7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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1,137
In-stock
|
onsemi | IGBT Transistors 1200V/50A FAST IGBT FSII | Through Hole | TO-247 | + 175 C | Tube | 535 W | Single | 1200 V | 2.2 V | 100 A | 200 nA | 30 V | |||
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442
In-stock
|
onsemi | IGBT Transistors IGBT 1200V 25A FS3 SOLAR/ | Through Hole | TO247-3 | + 175 C | Tube | 349 W | Single | 1.2 kV | 1.7 V | 100 A | 200 nA | +/- 20 V | |||
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185
In-stock
|
onsemi | IGBT Transistors 600V/50A IGBT NPT TO-247 | Through Hole | TO-247 | + 150 C | Tube | 223 W | Single | 600 V | 1.45 V | 100 A | 200 nA | 30 V | |||
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116
In-stock
|
onsemi | IGBT Transistors 650V/60A FAST IGBT FSII | Through Hole | TO-247-3 | + 175 C | Tube | 595 W | Single | 650 V | 1.64 V | 100 A | 200 nA | +/- 20 V | |||
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46
In-stock
|
onsemi | IGBT Transistors FSII 75A 600V Welding | Through Hole | TO-247-3 | + 175 C | Tube | 595 W | Single | 600 V | 1.7 V | 100 A | 200 nA | +/- 20 V | |||
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146
In-stock
|
onsemi | IGBT Transistors 600V/50A IGBT NPT TO-247 | Through Hole | TO-247 | + 150 C | Tube | 223 W | Single | 600 V | 1.45 V | 100 A | 200 nA | 30 V | |||
|
|
150
In-stock
|
onsemi | IGBT Transistors FSII 50A 600V Welding | Through Hole | TO-247-3 | + 175 C | Tube | 417 W | Single | 600 V | 1.8 V | 100 A | 200 nA | +/- 20 V |
