- Maximum Operating Temperature :
- Collector- Emitter Voltage VCEO Max :
- Collector-Emitter Saturation Voltage :
3 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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1,137
In-stock
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onsemi | IGBT Transistors 1200V/50A FAST IGBT FSII | Through Hole | TO-247 | + 175 C | Tube | 535 W | Single | 1200 V | 2.2 V | 100 A | 200 nA | 30 V | ||||
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185
In-stock
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onsemi | IGBT Transistors 600V/50A IGBT NPT TO-247 | Through Hole | TO-247 | + 150 C | Tube | 223 W | Single | 600 V | 1.45 V | 100 A | 200 nA | 30 V | ||||
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146
In-stock
|
onsemi | IGBT Transistors 600V/50A IGBT NPT TO-247 | Through Hole | TO-247 | + 150 C | Tube | 223 W | Single | 600 V | 1.45 V | 100 A | 200 nA | 30 V |