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Maximum Operating Temperature :
Collector- Emitter Voltage VCEO Max :
Collector-Emitter Saturation Voltage :
Gate-Emitter Leakage Current :
Maximum Gate Emitter Voltage :
7 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
SGH40N60UFDTU
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RFQ
2,710
In-stock
onsemi IGBT Transistors Dis High Perf IGBT Through Hole TO-3P-3 + 150 C Tube 160 W Single 600 V 2.1 V 40 A +/- 100 nA +/- 20 V
NGTB20N135IHRWG
1+
$4.850
10+
$4.120
100+
$3.570
250+
$3.390
RFQ
333
In-stock
onsemi IGBT Transistors 1350V/20A IGBT FSII TO-24 Through Hole TO-247 + 175 C Tube 394 W Single 1350 V 2.2 V 40 A 100 nA 25 V
NGTB20N120IHRWG
1+
$4.500
10+
$3.830
100+
$3.320
250+
$3.150
RFQ
510
In-stock
onsemi IGBT Transistors 1200V/20A RC IGBT FSII Through Hole TO-247 + 175 C Tube 384 W Single 1200 V 2.1 V 40 A 100 nA 20 V
NGTB20N120IHWG
1+
$4.400
10+
$3.740
100+
$3.240
250+
$3.080
RFQ
172
In-stock
onsemi IGBT Transistors LC IH RC OSV Through Hole TO-247-3 + 175 C Tube 341 W Single 1.2 kV 2.2 V 40 A 100 nA +/- 20 V
NGTB20N60L2TF1G
1+
$2.960
10+
$2.510
100+
$2.180
250+
$2.070
RFQ
271
In-stock
onsemi IGBT Transistors 600V 20A IGBT TO-3PF Through Hole TO-3PF-3L + 175 C Tube 64 W Single 600 V 1.45 V 40 A 100 nA 20 V
NGTG20N60L2TF1G
1+
$2.810
10+
$2.390
100+
$1.910
500+
$1.670
RFQ
220
In-stock
onsemi IGBT Transistors 600V 20A IGBT TO-3PF Through Hole TO-3PF-3L   Tube 64 W Single 600 V 1.65 V 40 A 100 nA 20 V
NGTB20N120IHSWG
1+
$2.800
10+
$2.380
100+
$1.900
500+
$1.670
RFQ
190
In-stock
onsemi IGBT Transistors 1200/20A IGBT LPT TO-24 Through Hole TO-247 + 150 C Tube 156 W Single 1200 V 2.5 V 40 A 100 nA +/- 20 V
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