- Package / Case :
- Maximum Operating Temperature :
- Collector-Emitter Saturation Voltage :
- Gate-Emitter Leakage Current :
- Maximum Gate Emitter Voltage :
3 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
GET PRICE |
2,710
In-stock
|
onsemi | IGBT Transistors Dis High Perf IGBT | Through Hole | TO-3P-3 | + 150 C | Tube | 160 W | Single | 600 V | 2.1 V | 40 A | +/- 100 nA | +/- 20 V | |||
|
271
In-stock
|
onsemi | IGBT Transistors 600V 20A IGBT TO-3PF | Through Hole | TO-3PF-3L | + 175 C | Tube | 64 W | Single | 600 V | 1.45 V | 40 A | 100 nA | 20 V | ||||
|
220
In-stock
|
onsemi | IGBT Transistors 600V 20A IGBT TO-3PF | Through Hole | TO-3PF-3L | Tube | 64 W | Single | 600 V | 1.65 V | 40 A | 100 nA | 20 V |