- Package / Case :
- Maximum Operating Temperature :
- Collector-Emitter Saturation Voltage :
- Maximum Gate Emitter Voltage :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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512
In-stock
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IR / Infineon | IGBT Transistors 1200V DC-1kHz | Through Hole | TO-247-3 | + 150 C | Tube | 200 W | Single | 1.2 kV | 1.75 V | 57 A | 100 nA | 20 V | |||
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340
In-stock
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IR / Infineon | IGBT Transistors 1200V IGBT 81A Auto 1.37V at 33A Low VCE | Through Hole | TO-220-3 | Tube | 543 W | 1.2 kV | 1.57 V | 141 A | 100 nA | 20 V | |||||
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119
In-stock
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IR / Infineon | IGBT Transistors 1200V UltraFast 5-40kHz | Through Hole | TO-247-3 | + 150 C | Tube | 160 W | Single | 1.2 kV | 2.43 V | 41 A | 100 nA | +/- 20 V | |||
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200
In-stock
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IR / Infineon | IGBT Transistors 1200V UltraFast 5-40kHz | Through Hole | TO-274-3 | + 150 C | Tube | 595 W | Single | 1.2 kV | 2.33 V | 105 A | 100 nA | +/- 20 V | |||
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94
In-stock
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IR / Infineon | IGBT Transistors Trnch IGBT 1200V 10A single IGBT | Through Hole | TO-247-3 | + 175 C | Tube | 210 W | Single | 1.2 kV | 2.05 V | 33 A | 100 nA | +/- 30 V |
