- Package / Case :
- Collector- Emitter Voltage VCEO Max :
- Gate-Emitter Leakage Current :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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591
In-stock
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STMicroelectronics | IGBT Transistors IGBT & Power Bipolar | Through Hole | TO247-3 | + 175 C | Tube | 468 W | Single | 1.2 kV | 1.65 V | 80 A | 250 nA | +/- 20 V | ||
|
|
GET PRICE |
600
In-stock
|
STMicroelectronics | IGBT Transistors IGBT & Power Bipolar | Through Hole | TO247-3 | + 175 C | Tube | 468 W | Single | 1.2 kV | 1.65 V | 80 A | 250 nA | +/- 20 V | ||
|
|
GET PRICE |
6,000
In-stock
|
STMicroelectronics | IGBT Transistors Trench gate field-stop IGBT M series, 650 V 75 A l... | Through Hole | TO-247-3 | + 175 C | 468 W | Single | 650 V | 1.65 V | 120 A | +/- 250 uA | +/- 20 V |
