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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
IKW30N65EL5XKSA1
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962
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Infineon Technologies IGBT Transistors 650V IGBT Trenchstop 5 Through Hole TO-247-3 + 175 C Tube 227 W Single 650 V 1.05 V 85 A 100 nA 20 V
IGW30N65L5XKSA1
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RFQ
424
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Infineon Technologies IGBT Transistors 650V IGBT Trenchstop 5 Through Hole TO-247-3 + 175 C Tube 227 W Single 650 V 1.05 V 85 A 100 nA 20 V
IKW30N65NL5XKSA1
GET PRICE
RFQ
222
In-stock
Infineon Technologies IGBT Transistors 650V IGBT Trenchstop 5 Through Hole TO-247-3 + 175 C Tube 227 W Single 650 V 1.05 V 85 A 100 nA 20 V
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