- Manufacture :
- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Collector-Emitter Saturation Voltage :
- Maximum Gate Emitter Voltage :
13 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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91
In-stock
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Infineon Technologies | IGBT Transistors 900V Warp 20-100kHz | Through Hole | TO-247-3 | + 150 C | Tube | 200 W | Single | 900 V | 2.25 V | 51 A | 100 nA | +/- 20 V | ||||
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67
In-stock
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IXYS | IGBT Transistors XPT 900V IGBT GenX3 XPT IGBT | Through Hole | TO-247AD-3 | + 150 C | Tube | 500 W | Single | 900 V | 2.2 V | 90 A | 100 nA | +/- 20 V | ||||
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56
In-stock
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IXYS | IGBT Transistors 900V 60A 2.7V XPT IGBT GenX3 | Through Hole | TO-247-3 | + 175 C | Tube | Single | 900 V | 2.7 V | 140 A | 100 nA | +/- 20 V | |||||
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48
In-stock
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Microsemi | IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS... | Through Hole | TO-264-3 | + 150 C | Tube | 500 W | Single | 900 V | 2.5 V | 117 A | 100 nA | 30 V | ||||
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30
In-stock
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IXYS | IGBT Transistors 900V 24A 2.7V XPT IGBTs GenX3 w/ Diode | Through Hole | TO-247-3 | + 150 C | Tube | Single | 900 V | 2.7 V | 44 A | 100 nA | +/- 20 V | |||||
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14
In-stock
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IXYS | IGBT Transistors 50 Amps 900V 2.7 Rds | Through Hole | TO-247-3 | + 150 C | Tube | 400 W | Single | 900 V | 2.2 V | 75 A | 100 nA | +/- 20 V | ||||
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40
In-stock
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IXYS | IGBT Transistors 900V 8A 2.5V XPT IGBTs GenX3 w/ Diode | SMD/SMT | TO-263-3 | + 175 C | Tube | Single | 900 V | 2.5 V | 20 A | 100 nA | +/- 20 V | |||||
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96
In-stock
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IXYS | IGBT Transistors 900V 8A 2.5V XPT IGBTs GenX3 | SMD/SMT | TO-252-3 | + 175 C | Tube | Single | 900 V | 2.5 V | 20 A | 100 nA | +/- 20 V | |||||
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30
In-stock
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IXYS | IGBT Transistors GenX3 900V XPT IGBTs | Through Hole | TO-247-3 | + 175 C | Tube | 600 W | Single | 900 V | 2.2 V | 105 A | 100 nA | 30 V | ||||
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193
In-stock
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Infineon Technologies | IGBT Transistors 900V Warp 20-100kHz | Through Hole | TO-247-3 | + 150 C | Tube | 200 W | Single | 900 V | 2.25 V | 51 A | 100 nA | +/- 20 V | ||||
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VIEW | IXYS | IGBT Transistors XPT 900V IGBT GenX3 XPT IGBT | Through Hole | TO-220-3 | + 175 C | Tube | 125 W | Single | 900 V | 2.15 V | 20 A | 100 nA | 30 V | ||||
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VIEW | IXYS | IGBT Transistors XPT 900V IGBT GenX3 XPT IGBTs | Through Hole | TO-220-3 | + 175 C | Tube | 125 W | Single | 900 V | 2.15 V | 20 A | 100 nA | 30 V | ||||
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VIEW | IXYS | IGBT Transistors GenX3 900V XPT IGBTs | Through Hole | TO-247-3 | + 175 C | Tube | 240 W | Single | 900 V | 2.3 V | 46 A | 100 nA | 30 V |