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Maximum Operating Temperature :
Pd - Power Dissipation :
Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
5 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
APT64GA90LD30
1+
$12.450
10+
$11.320
25+
$10.470
50+
$9.900
RFQ
48
In-stock
Microsemi IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS... Through Hole TO-264-3 + 150 C Tube 500 W Single 900 V 2.5 V 117 A 100 nA 30 V
IXYH40N90C3
1+
$5.640
10+
$4.800
100+
$4.160
250+
$3.950
RFQ
30
In-stock
IXYS IGBT Transistors GenX3 900V XPT IGBTs Through Hole TO-247-3 + 175 C Tube 600 W Single 900 V 2.2 V 105 A 100 nA 30 V
IXYP8N90C3
1+
$2.650
10+
$2.250
100+
$1.960
250+
$1.860
VIEW
RFQ
IXYS IGBT Transistors XPT 900V IGBT GenX3 XPT IGBT Through Hole TO-220-3 + 175 C Tube 125 W Single 900 V 2.15 V 20 A 100 nA 30 V
IXYP8N90C3D1
1+
$3.630
10+
$3.090
100+
$2.680
250+
$2.540
VIEW
RFQ
IXYS IGBT Transistors XPT 900V IGBT GenX3 XPT IGBTs Through Hole TO-220-3 + 175 C Tube 125 W Single 900 V 2.15 V 20 A 100 nA 30 V
IXYH24N90C3
30+
$5.190
120+
$4.510
270+
$4.310
510+
$3.930
VIEW
RFQ
IXYS IGBT Transistors GenX3 900V XPT IGBTs Through Hole TO-247-3 + 175 C Tube 240 W Single 900 V 2.3 V 46 A 100 nA 30 V
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