- Manufacture :
- Package / Case :
- Maximum Operating Temperature :
- Collector-Emitter Saturation Voltage :
5 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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48
In-stock
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Microsemi | IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS... | Through Hole | TO-264-3 | + 150 C | Tube | 500 W | Single | 900 V | 2.5 V | 117 A | 100 nA | 30 V | ||||
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30
In-stock
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IXYS | IGBT Transistors GenX3 900V XPT IGBTs | Through Hole | TO-247-3 | + 175 C | Tube | 600 W | Single | 900 V | 2.2 V | 105 A | 100 nA | 30 V | ||||
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VIEW | IXYS | IGBT Transistors XPT 900V IGBT GenX3 XPT IGBT | Through Hole | TO-220-3 | + 175 C | Tube | 125 W | Single | 900 V | 2.15 V | 20 A | 100 nA | 30 V | ||||
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VIEW | IXYS | IGBT Transistors XPT 900V IGBT GenX3 XPT IGBTs | Through Hole | TO-220-3 | + 175 C | Tube | 125 W | Single | 900 V | 2.15 V | 20 A | 100 nA | 30 V | ||||
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VIEW | IXYS | IGBT Transistors GenX3 900V XPT IGBTs | Through Hole | TO-247-3 | + 175 C | Tube | 240 W | Single | 900 V | 2.3 V | 46 A | 100 nA | 30 V |