IGBT Transistors - Kaimeite

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IMAGE	PART NO.	PRICE	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Mounting Style	Package / Case	Maximum Operating Temperature	Packaging	Pd - Power Dissipation	Configuration	Collector- Emitter Voltage VCEO Max	Collector-Emitter Saturation Voltage	Continuous Collector Current at 25 C	Gate-Emitter Leakage Current	Maximum Gate Emitter Voltage
	IRG4BC40UPBF	1+ $3.490 10+ $2.970 100+ $2.570 250+ $2.440		PDF RFQ	608 In-stock	Infineon Technologies	IGBT Transistors 600V UltraFast 8-60kHz	Through Hole	TO-220-3		Tube	160 W	Single	600 V	2.1 V	40 A		+/- 20 V
	SGH40N60UFDTU		GET PRICE	PDF RFQ	2,710 In-stock	onsemi	IGBT Transistors Dis High Perf IGBT	Through Hole	TO-3P-3	+ 150 C	Tube	160 W	Single	600 V	2.1 V	40 A	+/- 100 nA	+/- 20 V
	IRG4PC40UPBF	1+ $4.050 10+ $3.440 100+ $2.980 250+ $2.830		PDF RFQ	95 In-stock	Infineon Technologies	IGBT Transistors 600V UltraFast 8-60kHz	Through Hole	TO-247-3		Tube	160 W	Single	600 V	2.1 V	40 A		+/- 20 V

IRG4BC40UPBF

IRG4BC40UPBF

Infineon Technologies

IGBT Transistors 600V UltraFast 8-60kHz

Stock : 608

1+: $3.490

10+: $2.970

100+: $2.570

250+: $2.440

SGH40N60UFDTU

SGH40N60UFDTU

onsemi

IGBT Transistors Dis High Perf IGBT

Stock : 2,710

GET PRICE

IRG4PC40UPBF

IRG4PC40UPBF

Infineon Technologies

IGBT Transistors 600V UltraFast 8-60kHz

Stock : 95

1+: $4.050

10+: $3.440

100+: $2.980

250+: $2.830

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