IGBT Transistors - Kaimeite

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9 products

IMAGE	PART NO.	PRICE	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Mounting Style	Package / Case	Maximum Operating Temperature	Packaging	Pd - Power Dissipation	Configuration	Collector- Emitter Voltage VCEO Max	Collector-Emitter Saturation Voltage	Continuous Collector Current at 25 C	Gate-Emitter Leakage Current	Maximum Gate Emitter Voltage
	IXGN72N60C3H1		GET PRICE	PDF RFQ	85 In-stock	IXYS	IGBT Transistors G-SERIES A3/B3/C3 GENX3 IGBT 600V 52A	SMD/SMT	SOT-227B-4	+ 150 C	Tube	360 W		600 V	2.1 V	78 A	100 nA	+/- 20 V
	AUIRGS30B60K		GET PRICE	PDF RFQ	116 In-stock	IR / Infineon	IGBT Transistors 600V AUTO ULTRAFAST 10-30 KHZ IGBT	SMD/SMT	D-PAK-3		Tube	370 W	Single	600 V	2.35 V	78 A		+/- 20 V
	IXA45IF1200HB		GET PRICE	PDF RFQ	90 In-stock	IXYS	IGBT Transistors N-Channel: Power MOSFET w/Fast Diode	Through Hole	TO-247-3	+ 150 C	Tube	325 W	Single	1200 V	1.8 V	78 A	500 nA	20 V
	AUIRGSL30B60K		GET PRICE	PDF RFQ	200 In-stock	Infineon Technologies	IGBT Transistors 600V AUTO ULTRAFAST 10-30 KHZ IGBT	Through Hole	TO-262-3		Tube	370 W	Single	600 V	2.35 V	78 A		+/- 20 V
	IRG4PSH71KDPBF		GET PRICE	PDF RFQ	47 In-stock	Infineon Technologies	IGBT Transistors 1200V UltraFast 4-20kHz	Through Hole	TO-274-3	+ 150 C	Tube	350 W	Single	1.2 kV	2.97 V	78 A	100 nA	+/- 20 V
	IRGB30B60KPBF		GET PRICE	PDF RFQ	300 In-stock	Infineon Technologies	IGBT Transistors 600V UltraFast 10-30kHz IGBT	Through Hole	TO-220-3		Tube	370 W	Single	600 V	2.35 V	78 A		+/- 20 V
	IRGS30B60KPBF		GET PRICE	PDF RFQ	392 In-stock	Infineon Technologies	IGBT Transistors 600V ULTRAFAST 10-30 KHZ IGBT	SMD/SMT	D-PAK-3	+ 150 C	Tube	370 W	Single	600 V	2.35 V	78 A	100 nA	+/- 20 V
	IRGSL30B60KPBF		GET PRICE	PDF RFQ	9,379 In-stock	Infineon Technologies	IGBT Transistors 600V UltraFast 10-30kHz IGBT	Through Hole	TO-262-3		Tube	370 W	Single	600 V	2.35 V	78 A		+/- 20 V
	IRG4PSH71KPBF		GET PRICE	PDF RFQ	1,346 In-stock	IR / Infineon	IGBT Transistors 1200V UltraFast 4-20kHz	Through Hole	TO-274AA-3		Tube	350 W	Single	1.2 kV	3.9 V	78 A		+/- 20 V

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