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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
IXA45IF1200HB
1+
$10.450
10+
$9.440
25+
$9.000
100+
$7.820
RFQ
90
In-stock
IXYS IGBT Transistors N-Channel: Power MOSFET w/Fast Diode Through Hole TO-247-3 + 150 C Tube 325 W Single 1200 V 1.8 V 78 A 500 nA 20 V
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