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Pd - Power Dissipation :
Collector-Emitter Saturation Voltage :
Maximum Gate Emitter Voltage :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
IRGB10B60KDPBF
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RFQ
707
In-stock
Infineon Technologies IGBT Transistors 600V UltraFast 10-30kHz Through Hole TO-220-3 + 150 C Tube 156 W Single 600 V 1.8 V 35 A 100 nA +/- 20 V
IRGS10B60KDPBF
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RFQ
204
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Infineon Technologies IGBT Transistors 600V ULTRAFAST 10-30KHZ COPACK IGBT SMD/SMT D-PAK-3 + 150 C Tube 156 W Single 600 V 1.8 V 35 A 100 nA +/- 20 V
STGF19NC60KD
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RFQ
984
In-stock
STMicroelectronics IGBT Transistors 2A 6V SHORT CIRCUIT RUGGED IGBT Through Hole TO-220FP-3 + 150 C Tube 32 W Single 600 V 2 V 35 A 100 nA 20 V
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