IGBT Transistors - Kaimeite

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IMAGE	PART NO.	PRICE	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Mounting Style	Package / Case	Maximum Operating Temperature	Packaging	Pd - Power Dissipation	Configuration	Collector- Emitter Voltage VCEO Max	Collector-Emitter Saturation Voltage	Continuous Collector Current at 25 C	Gate-Emitter Leakage Current	Maximum Gate Emitter Voltage
	IRGB10B60KDPBF	1+ $2.910 10+ $2.470 100+ $1.980 250+ $1.880		PDF RFQ	707 In-stock	Infineon Technologies	IGBT Transistors 600V UltraFast 10-30kHz	Through Hole	TO-220-3	+ 150 C	Tube	156 W	Single	600 V	1.8 V	35 A	100 nA	+/- 20 V
	IRGS10B60KDPBF	1+ $2.590 10+ $2.200 100+ $1.760 250+ $1.670		PDF RFQ	204 In-stock	Infineon Technologies	IGBT Transistors 600V ULTRAFAST 10-30KHZ COPACK IGBT	SMD/SMT	D-PAK-3	+ 150 C	Tube	156 W	Single	600 V	1.8 V	35 A	100 nA	+/- 20 V