Build a global manufacturer and supplier trusted trading platform.
Maximum Operating Temperature :
Pd - Power Dissipation :
Collector- Emitter Voltage VCEO Max :
Collector-Emitter Saturation Voltage :
Gate-Emitter Leakage Current :
Maximum Gate Emitter Voltage :
6 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
FGPF4565
GET PRICE
RFQ
630
In-stock
Fairchild Semiconductor IGBT Transistors 650V FS Trench for IPL Application Through Hole TO-220F + 150 C Tube 30 W   650 V 1.88 V 170 A 400 nA 25 V
IXYH75N65C3H1
GET PRICE
RFQ
76
In-stock
IXYS IGBT Transistors 650V/170A XPT C3-Class TO-247 Through Hole TO-247-3 + 175 C Tube 750 W Single 650 V 1.8 V 170 A 100 nA 30 V
IXGK100N170
GET PRICE
RFQ
30
In-stock
IXYS IGBT Transistors HIGH VOLT NPT IGBTS 1700V 100A Through Hole TO-264-3 + 150 C Tube 830 W Single 1.7 kV 2.5 V 170 A 200 nA +/- 20 V
IXXK100N60C3H1
GET PRICE
RFQ
32
In-stock
IXYS IGBT Transistors XPT IGBT C3-Class 600V/170Amp CoPacked Through Hole TO-264 + 150 C Tube 695 W   600 V 2.2 V 170 A 100 nA 20 V
IXYH75N65C3
GET PRICE
RFQ
35
In-stock
IXYS IGBT Transistors 650V/170A XPT C3-Class TO-247 Through Hole TO-247-3 + 175 C Tube 750 W Single 650 V 1.8 V 170 A 100 nA 30 V
IXGX100N170
VIEW
RFQ
IXYS IGBT Transistors HIGH VOLT NPT IGBTS 1700V 100A Through Hole PLUS 247-3 + 150 C Tube 830 W Single 1.7 kV 2.5 V 170 A 200 nA +/- 20 V
Page 1 / 1