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Pd - Power Dissipation :
Collector- Emitter Voltage VCEO Max :
Collector-Emitter Saturation Voltage :
Gate-Emitter Leakage Current :
Maximum Gate Emitter Voltage :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
FGPF4565
1+
$1.890
10+
$1.600
100+
$1.280
500+
$1.130
RFQ
630
In-stock
Fairchild Semiconductor IGBT Transistors 650V FS Trench for IPL Application Through Hole TO-220F + 150 C Tube 30 W   650 V 1.88 V 170 A 400 nA 25 V
IXGK100N170
1+
$31.980
5+
$31.650
10+
$29.500
25+
$28.180
RFQ
30
In-stock
IXYS IGBT Transistors HIGH VOLT NPT IGBTS 1700V 100A Through Hole TO-264-3 + 150 C Tube 830 W Single 1.7 kV 2.5 V 170 A 200 nA +/- 20 V
IXXK100N60C3H1
1+
$19.320
10+
$17.760
25+
$17.030
100+
$15.000
RFQ
32
In-stock
IXYS IGBT Transistors XPT IGBT C3-Class 600V/170Amp CoPacked Through Hole TO-264 + 150 C Tube 695 W   600 V 2.2 V 170 A 100 nA 20 V
IXGX100N170
30+
$28.060
120+
$25.080
270+
$23.930
510+
$22.780
VIEW
RFQ
IXYS IGBT Transistors HIGH VOLT NPT IGBTS 1700V 100A Through Hole PLUS 247-3 + 150 C Tube 830 W Single 1.7 kV 2.5 V 170 A 200 nA +/- 20 V
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