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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
NGTB40N120IHRWG
1+
$4.950
10+
$4.210
100+
$3.650
250+
$3.460
RFQ
201
In-stock
onsemi IGBT Transistors 1200V/40A RC IGBT FSII Through Hole TO-247 + 175 C Tube 384 W Single 1200 V 2.3 V 80 A 100 nA 25 V
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