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3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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510
In-stock
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onsemi | IGBT Transistors 1200V/20A RC IGBT FSII | Through Hole | TO-247 | + 175 C | Tube | 384 W | Single | 1200 V | 2.1 V | 40 A | 100 nA | 20 V | ||
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201
In-stock
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onsemi | IGBT Transistors 1200V/40A RC IGBT FSII | Through Hole | TO-247 | + 175 C | Tube | 384 W | Single | 1200 V | 2.3 V | 80 A | 100 nA | 25 V | ||
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161
In-stock
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onsemi | IGBT Transistors 1200V/30A RC IGBT FSII | Through Hole | TO-247 | + 175 C | Tube | 384 W | Single | 1200 V | 2.2 V | 60 A | 100 nA | 25 V |
