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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
NGTB30N120IHRWG
1+
$4.740
10+
$4.030
100+
$3.500
250+
$3.320
RFQ
161
In-stock
onsemi IGBT Transistors 1200V/30A RC IGBT FSII Through Hole TO-247 + 175 C Tube 384 W Single 1200 V 2.2 V 60 A 100 nA 25 V
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