IGBT Transistors - Kaimeite

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7 products

PART NO.	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Mounting Style	Package / Case	Maximum Operating Temperature	Packaging	Pd - Power Dissipation	Configuration	Collector- Emitter Voltage VCEO Max	Collector-Emitter Saturation Voltage	Continuous Collector Current at 25 C	Gate-Emitter Leakage Current	Maximum Gate Emitter Voltage
FGH30S130P	GET PRICE	PDF RFQ	432 In-stock	Fairchild Semiconductor	IGBT Transistors 1300V 30A FS SA Trench IGBT	Through Hole	TO-3PN	+ 175 C	Tube	500 W	Single	1300 V	1.9 V	60 A		25 V
FGH30S150P	GET PRICE	PDF RFQ	397 In-stock	Fairchild Semiconductor	IGBT Transistors 1500V 30A FS SA Trench IGBT	Through Hole	TO-247-3	+ 175 C	Tube	500 W	Single	1.5 kV	2.15 V	60 A	+/- 500 nA	+/- 25 V
IXYN82N120C3H1	GET PRICE	PDF RFQ	35 In-stock	IXYS	IGBT Transistors XPT IGBT C3-Class 1200V/105A; Copack	SMD/SMT	SOT-227B-4	+ 150 C	Tube	500 W	Single	1200 V	2.75 V	105 A	100 nA	30 V
IXYH40N90C3D1	GET PRICE	PDF RFQ	67 In-stock	IXYS	IGBT Transistors XPT 900V IGBT GenX3 XPT IGBT	Through Hole	TO-247AD-3	+ 150 C	Tube	500 W	Single	900 V	2.2 V	90 A	100 nA	+/- 20 V
APT64GA90LD30	GET PRICE	PDF RFQ	48 In-stock	Microsemi	IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS...	Through Hole	TO-264-3	+ 150 C	Tube	500 W	Single	900 V	2.5 V	117 A	100 nA	30 V
IXYH30N120C3	GET PRICE	PDF RFQ	30 In-stock	IXYS	IGBT Transistors 1200V XPT GenX3 IGBT	Through Hole	TO-247-3	+ 150 C	Tube	500 W	Single	1200 V	3.7 V	75 A	100 nA	30 V
IXYP30N120C3	GET PRICE	PDF RFQ	70 In-stock	IXYS	IGBT Transistors GenX3 1200V XPT IGBT	Through Hole	TO-220-3	+ 175 C	Tube	500 W	Single	1200 V	3.7 V	75 A	100 nA	30 V

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