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Pd - Power Dissipation :
Collector-Emitter Saturation Voltage :
Maximum Gate Emitter Voltage :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
IRG7PH35UD-EP
1+
$6.000
10+
$5.000
25+
$5.000
100+
$4.000
RFQ
100
In-stock
Infineon Technologies IGBT Transistors IGBT DISCRETES Through Hole TO-247-3   Tube 180 W   1.2 kV 2.2 V 50 A    
IRG7PH35UDPBF
1+
$6.320
10+
$5.710
25+
$5.450
100+
$4.730
RFQ
63
In-stock
Infineon Technologies IGBT Transistors 1200V Trench IGBT Inductn Cooking 50A Through Hole TO-247-3 + 150 C Tube 180 W Single 1.2 kV 1.9 V 50 A 100 nA +/- 30 V
IHW25N120E1XKSA1
1+
$3.380
10+
$2.870
100+
$2.490
250+
$2.360
RFQ
44
In-stock
Infineon Technologies IGBT Transistors IGBT PRODUCTS Through Hole TO-247-3 + 150 C Tube 231 W Single 1.2 kV 1.5 V 50 A 100 nA +/- 20 V
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