IGBT Transistors - Kaimeite

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11 products

IMAGE	PART NO.	PRICE	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Mounting Style	Package / Case	Maximum Operating Temperature	Packaging	Pd - Power Dissipation	Configuration	Collector- Emitter Voltage VCEO Max	Collector-Emitter Saturation Voltage	Continuous Collector Current at 25 C	Gate-Emitter Leakage Current	Maximum Gate Emitter Voltage
	IXGH30N120B3D1		GET PRICE	PDF RFQ	305 In-stock	IXYS	IGBT Transistors 60 Amps 1200V	Through Hole	TO-247-3	+ 150 C	Tube	300 W		1.2 kV	2.96 V	50 A	100 nA	+/- 20 V
	STGWA25S120DF3		GET PRICE	PDF RFQ	200 In-stock	STMicroelectronics	IGBT Transistors IGBT & Power Bipolar	Through Hole	TO247-3	+ 175 C	Tube	375 W	Single	1.2 kV	1.6 V	50 A	250 nA	+/- 20 V
	STGW25S120DF3		GET PRICE	PDF RFQ	180 In-stock	STMicroelectronics	IGBT Transistors IGBT & Power Bipolar	Through Hole	TO247-3	+ 175 C	Tube	375 W	Single	1.2 kV	1.6 V	50 A	250 nA	+/- 20 V
	IRG7PH35UD-EP		GET PRICE	PDF RFQ	100 In-stock	Infineon Technologies	IGBT Transistors IGBT DISCRETES	Through Hole	TO-247-3		Tube	180 W		1.2 kV	2.2 V	50 A
	IRG7PH35UDPBF		GET PRICE	PDF RFQ	63 In-stock	Infineon Technologies	IGBT Transistors 1200V Trench IGBT Inductn Cooking 50A	Through Hole	TO-247-3	+ 150 C	Tube	180 W	Single	1.2 kV	1.9 V	50 A	100 nA	+/- 30 V
	IXDR30N120D1		GET PRICE	PDF RFQ	42 In-stock	IXYS	IGBT Transistors 30 Amps 1200V	Through Hole	ISOPLUS247-3	+ 150 C	Tube	200 W	Single	1.2 kV	2.4 V	50 A	500 nA	+/- 20 V
	IXDR30N120		GET PRICE	PDF RFQ	19 In-stock	IXYS	IGBT Transistors 30 Amps 1200V	Through Hole	ISOPLUS247-3	+ 150 C	Tube	200 W	Single	1.2 kV	2.4 V	50 A	500 nA	+/- 20 V
	IHW25N120E1XKSA1		GET PRICE	PDF RFQ	44 In-stock	Infineon Technologies	IGBT Transistors IGBT PRODUCTS	Through Hole	TO-247-3	+ 150 C	Tube	231 W	Single	1.2 kV	1.5 V	50 A	100 nA	+/- 20 V
	NGTB25N120SWG		GET PRICE	PDF RFQ	145 In-stock	onsemi	IGBT Transistors FSII 25A 1200V Welding	Through Hole	TO-247-3	+ 175 C	Tube	385 W	Single	1.2 kV	2 V	50 A	200 nA	+/- 20 V
	STGWA25M120DF3		GET PRICE	PDF RFQ	597 In-stock	STMicroelectronics	IGBT Transistors IGBT & Power Bipolar	Through Hole	TO-247-3	+ 175 C	Tube	375 W	Single	1.2 kV	1.85 V	50 A	250 nA	20 V
	IRG7PH35UD1-EP		GET PRICE	PDF RFQ	30 In-stock	IR / Infineon	IGBT Transistors IGBT DISCRETES	Through Hole	TO-247-3		Tube	179 W		1.2 kV	2.2 V	50 A

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