IGBT Transistors - Kaimeite

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PART NO.	PRICE		STOCK	MANUFACTURE	DESCRIPTION	Mounting Style	Package / Case	Maximum Operating Temperature	Packaging	Pd - Power Dissipation	Configuration	Collector- Emitter Voltage VCEO Max	Collector-Emitter Saturation Voltage	Continuous Collector Current at 25 C	Gate-Emitter Leakage Current	Maximum Gate Emitter Voltage
IXGH30N120B3D1	1+ $8.640 10+ $7.810 25+ $7.450 100+ $6.470	PDF RFQ	305 In-stock	IXYS	IGBT Transistors 60 Amps 1200V	Through Hole	TO-247-3	+ 150 C	Tube	300 W		1.2 kV	2.96 V	50 A	100 nA	+/- 20 V
IRG7PH35UDPBF	1+ $6.320 10+ $5.710 25+ $5.450 100+ $4.730	PDF RFQ	63 In-stock	Infineon Technologies	IGBT Transistors 1200V Trench IGBT Inductn Cooking 50A	Through Hole	TO-247-3	+ 150 C	Tube	180 W	Single	1.2 kV	1.9 V	50 A	100 nA	+/- 30 V
IHW25N120E1XKSA1	1+ $3.380 10+ $2.870 100+ $2.490 250+ $2.360	PDF RFQ	44 In-stock	Infineon Technologies	IGBT Transistors IGBT PRODUCTS	Through Hole	TO-247-3	+ 150 C	Tube	231 W	Single	1.2 kV	1.5 V	50 A	100 nA	+/- 20 V