- Maximum Operating Temperature :
- Collector-Emitter Saturation Voltage :
- Gate-Emitter Leakage Current :
- Maximum Gate Emitter Voltage :
7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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305
In-stock
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IXYS | IGBT Transistors 60 Amps 1200V | Through Hole | TO-247-3 | + 150 C | Tube | 300 W | 1.2 kV | 2.96 V | 50 A | 100 nA | +/- 20 V | ||||
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100
In-stock
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Infineon Technologies | IGBT Transistors IGBT DISCRETES | Through Hole | TO-247-3 | Tube | 180 W | 1.2 kV | 2.2 V | 50 A | |||||||
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63
In-stock
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Infineon Technologies | IGBT Transistors 1200V Trench IGBT Inductn Cooking 50A | Through Hole | TO-247-3 | + 150 C | Tube | 180 W | Single | 1.2 kV | 1.9 V | 50 A | 100 nA | +/- 30 V | |||
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44
In-stock
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Infineon Technologies | IGBT Transistors IGBT PRODUCTS | Through Hole | TO-247-3 | + 150 C | Tube | 231 W | Single | 1.2 kV | 1.5 V | 50 A | 100 nA | +/- 20 V | |||
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145
In-stock
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onsemi | IGBT Transistors FSII 25A 1200V Welding | Through Hole | TO-247-3 | + 175 C | Tube | 385 W | Single | 1.2 kV | 2 V | 50 A | 200 nA | +/- 20 V | |||
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597
In-stock
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STMicroelectronics | IGBT Transistors IGBT & Power Bipolar | Through Hole | TO-247-3 | + 175 C | Tube | 375 W | Single | 1.2 kV | 1.85 V | 50 A | 250 nA | 20 V | |||
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30
In-stock
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IR / Infineon | IGBT Transistors IGBT DISCRETES | Through Hole | TO-247-3 | Tube | 179 W | 1.2 kV | 2.2 V | 50 A |
