- Manufacture :
- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Configuration :
- Collector- Emitter Voltage VCEO Max :
- Gate-Emitter Leakage Current :
- Maximum Gate Emitter Voltage :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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145
In-stock
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IXYS | IGBT Transistors 50 Amps 1700V 3.3 V Rds | Through Hole | TO-247-3 | + 150 C | Tube | 250 W | Single | 1.7 kV | 2.5 V | 50 A | 100 nA | +/- 20 V | |||
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600
In-stock
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STMicroelectronics | IGBT Transistors IGBT & Power Bipolar | Through Hole | + 175 C | 375 W | Single | 1200 V | 2.5 V | 50 A | 250 nA | 20 V | |||||
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600
In-stock
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STMicroelectronics | IGBT Transistors IGBT & Power Bipolar | Through Hole | + 175 C | 375 W | Single | 1200 V | 2.5 V | 50 A | 250 nA | 20 V | |||||
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VIEW | IXYS | IGBT Transistors 24 Amps 1200 V 3.3 V Rds | SMD/SMT | TO-268-3 | + 150 C | Tube | 250 W | Single | 1.7 kV | 2.5 V | 50 A | 100 nA | +/- 20 V | |||
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59
In-stock
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STMicroelectronics | IGBT Transistors N-Ch 600volt 50 Amp | Through Hole | ISOTOP-4 | + 150 C | Tube | 260 W | Single Dual Emitter | 600 V | 2.5 V | 50 A | 100 nA | 20 V |
